InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

Yam, F.K.; Hassan, Z.

doi:10.1016/j.spmi.2007.05.001

Cited by 220 publications

(152 citation statements)

References 161 publications

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“…However, the growth of defect-free and homogeneous In x Ga 1−x N or In x Al 1−x N becomes more challenging for such large compositions x. 6 In some growth experiments, e.g. metal organic chemical vapor deposition (MOCVD), the higher vapor pressure of InN with respect to that of GaN or AlN leads to low In incorporation into the alloys.…”

mentioning

confidence: 99%

“…15,16 In addition, the reasons for inhomogeneities, i.e., if they are due to thermodynamics, growth kinetics, or layer deposition, oftentimes remain unclear. 6 In the more recent publications, such local variations in the composition are simply discussed as composition fluctuation on a nm-length scale 17,18 or are associated with atomic condensates (small spatial extent of < 4 nm) of InN. 19 The possible instability of In x X 1−x N layers (X=Ga, Al) against decomposition into two random alloys as well as the occurrence of fluctuations in a compositionally disordered system have been studied theoretically in a variety of papers.…”

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confidence: 99%

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Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
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The ternary, isostructural, wurtzite-derived group-III mononitride alloys In x Ga 1−x N and In x Al 1−x N are reexamined within a cluster expansion approach. Using density functional theory together with the AM05 exchangecorrelation functional, the total energies and the optimized atomic geometries of all 22 clusters classes of the cluster expansion for each material system are calculated. The computationally demanding calculation of the corresponding quasiparticle electronic structures is achieved for all cluster classes by means of a recently developed scheme to approximately solve the quasiparticle equation based on the HSE06 hybrid functional and the G 0 W 0 approach. Using two different alloy statistics, the configurational averages for the lattice parameters, the mixing enthalpies, and the bulk moduli are calculated. The composition-dependent electronic structures of the alloys are discussed based on configurationally averaged electronic states, band gaps, and densities of states. Ordered cluster arrangements are found to be energetically rather unfavorable, however, they possess the smallest energy gaps and, hence, contribute to light emission. The influence of the alloy statistics on the composition dependencies and the corresponding bowing parameters of the band gaps is found to be significant and should, hence, lead to different signatures in the optical-absorption or -emission spectra.

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mentioning

confidence: 99%

mentioning

confidence: 99%

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
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“…19 The calculated values for E pol are 0.622 eV and 0.539 eV for the QDs and the WL, respectively. The magnitude of the actual values should be lower than calculated due to the partial relaxation in the crystal which lowers the built in piezoelectric field and thus, decreasing the QCSE.…”

Section: Resultsmentioning

confidence: 94%

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

ElAfandy

Cha

et al. 2012

Journal of Applied Physics

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CitationElAfandy RT, Ng TK, Cha D, Zhang M, Bhattacharya P, et al. (2012) Differences in optical and structural properties of indium rich (27%), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (lPL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent lPL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. V C 2012 American Institute of Physics.[http://dx

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“…3 The material has a larger peak electron velocity, larger saturation velocity, higher breakdown voltage, and thermal stability, making it highly suitable for use as a channel material in microwave power devices. 4,5 Applications of InGaN include LEDs, laser diodes, [6][7][8] solar cells, [9][10][11] and photodetectors. Much interest has been focused on InGaN/GaN multi quantum wells (MQWs) because of their utility as the active layer in high-brightness III-nitride LEDs and continuous-wave (CW) blue-green laser diodes (LDs).…”

Section: Introductionmentioning

confidence: 99%

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

Gedam

Pansari

Sahoo

2015

Journal of Elec Materi

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In this work, we have investigated theoretically the effect of macroscopic polarization [sum of spontaneous (SP) and piezoelectric (PZ) polarization] on various physical parameters of In x Ga 1Àx N alloy. The macroscopic polarization contributes to the effective elastic constants of In x Ga 1Àx N alloy. This modifies the phonon group velocity, Debye temperature, and Debye frequency of the alloy. These thermal parameters are estimated as a function of In composition. Our calculation shows that these material parameters are enhanced and vary nonlinearly with In composition, i.e., show bowing. The cause of bowing is the nonlinear dependence of the spontaneous and piezoelectric polarization on composition. The bowing constant of each material parameter (with and without polarization) is also theoretically predicted by the best-fit method. The results show that the polarization mechanism not only enhances the parameters but also contributes significantly to the bowing constant. The macroscopic polarization contributes more than 25% to the bowing constant. The obtained results can be used to predict the effect of the polarization mechanism on the thermoelectric properties of In x Ga 1Àx N alloy.

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InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

Cited by 220 publications

References 161 publications

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

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InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

Cited by 220 publications

References 161 publications

Distribution of cations in wurtzitic InxGa1−xN and InxCarvalho1, Schleife2, Furthmüller3 et al. 2012Phys. Rev. B251180View full textAdd to dashboardCite

Distribution of cations in wurtzitic InxGa1−xN and InxCarvalho1, Schleife2, Furthmüller3 et al. 2012Phys. Rev. B251180View full textAdd to dashboardCite

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

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Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite

Distribution of cations in wurtzitic InxGa1−xN and Inx
Carvalho
¹
,
Schleife
²
,
Furthmüller
³

et al. 2012
Phys. Rev. B
25
1
18
0
View full text Add to dashboard Cite