InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin–ichi; Iwasa, Naruhito; Yamada, Takehiro; Matsushita, Toshio; Kiyoku, Hiroyuki; Sugimoto, Yasunobu

doi:10.1143/jjap.35.l74

Cited by 2,506 publications

(941 citation statements)

References 16 publications

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“…[1][2][3][4] Among this group of materials, aluminum nitride (AlN) attracted lots of attention due to its direct and wide band gap of 6.2 eV, excellent thermal conductivity, good piezoelectric properties, good chemical and thermal stability, and high acoustic velocity. Moreover, AlN has a high dielectric constant, which makes it a potential insulating material for metal-insulator-semiconductor (MIS) devices.…”

Section: Introductionmentioning

confidence: 99%

Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Altuntaş

Özgit-Akgün

Dönmez

et al. 2015

Journal of Applied Physics

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Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements. © 2015 AIP Publishing LLC

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Section: Introductionmentioning

confidence: 99%

Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Altuntaş

Özgit-Akgün

Dönmez

et al. 2015

Journal of Applied Physics

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“…In 1996, Nakamura et al developed gallium nitride (GaN) violet-laser diodes [7], which now find widespread use as light sources for high-speed and multilayer recording systems such as Blu-ray Disc and HD-DVD systems [8].…”

Section: Introductionmentioning

confidence: 99%

Light-curing of dental resins with GaN violet laser diode: The effect of photoinitiator on mechanical strength

Kameyama

Hatayama²,

Kato

et al. 2011

Lasers Med Sci

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The purpose of this study was to evaluate whether a Gallium Nitride (GaN) -based violet laser diode (VLM500) could be used as a light source for light-cured dental resins. Three experimental unfilled resins containing different photoinitiators (camphorquinone, CQ; phenyl propanedione, PPD; or mono acylphosphineoxide, MAPO) were evaluated. These resins were lightcured with a VLM500 laser diode, and their ultimate micro-tensile strengths (μTS) were compared to those cured with three different LED light sources (Curenos, G-Light Prima-normal mode and G-Light Prima-PL mode). The VLM500 produced high µTS values in all three resins, and we concluded that this violet laser diode can be used as a light source for light-cured dental resin materials.

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“…Both pulsed and continuous-wave operation of InGaN/GaN-based devices have been demonstrated at room temperature. 1,2 One of the main concerns in nitride lasers is the fabrication of high-quality mirrors. Up to now, most research groups use sapphire substrates for GaN growth; however, the misorientation between the sapphire and the GaN cleavage planes does not readily permit cleaving of the facets.…”

mentioning

confidence: 99%

Demonstration of an InGaN/GaN-based optically pumped multiquantum well distributed feedback laser using holographically defined third-order gratings

Hofstetter

Thornton

Kneissl

et al. 1998

Applied Physics Letters

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We demonstrate an optically pumped InGaN/GaN-based multiquantum well distributed feedback laser in the blue spectral region. The third-order grating providing feedback was defined holographically and dry etched into the upper waveguiding layer by chemically assisted ion-beam etching. When aligning the stripe-shaped pump beam either parallel or perpendicular to the grating grooves, we found a considerably lower pumping threshold, higher slope efficiency, a slightly longer emission wavelength, and a much narrower linewidth for the geometry with the pump beam orthogonal to the grating lines. A nearly constant emission wavelength of 400.85 nm and a linewidth of 0.7 Å were observed under various pump intensities. To the best of our knowledge, this is the narrowest linewidth ever reported for an optically pumped device in this material system.The fabrication of an electrically pumped laser in the blue spectral region has attracted a lot of attention in the past couple of years. Both pulsed and continuous-wave operation of InGaN/GaN-based devices have been demonstrated at room temperature. 1,2 One of the main concerns in nitride lasers is the fabrication of high-quality mirrors. Up to now, most research groups use sapphire substrates for GaN growth; however, the misorientation between the sapphire and the GaN cleavage planes does not readily permit cleaving of the facets. Polishing of the laser mirrors also does not entirely satisfy because it is a very time-consuming process. Although dry-etched mirrors with high reflective coatings seem to work well in this material system, there is still a certain demand to improve the cavity properties of nitride lasers as far as mirror loss and especially mode selection are concerned. One of the possible solutions of this problem is the implementation of distributed feedback ͑DFB͒, which eliminates the need for excellent cavity mirrors. A relatively straight forward way to explore this idea is the fabrication of an optically pumped device. According to this, Hofmann et al. 3 reported an optically pumped DFB laser in the InGaN/ GaN material system. However, their device was a simple double heterostructure, employed a second-order diffraction grating for surface emission, and the grating was generated using e-beam direct writing. In this letter, we demonstrate the fabrication of a nitride-based multiquantum well ͑MQW͒ DFB laser with a holographically defined third-order grating, which results in edge emission. When compared to the Fabry-Perot-type emission observed from the same material, a reduced threshold pump intensity, a higher slope efficiency, and a much narrower linewidth were seen.The fabrication of these devices relied on growing a 4 m thick GaN layer on C-face sapphire. On top of this layer, we grew a 500 nm thick Al 0.08 Ga 0.92 N lower cladding layer, a 100 nm thick GaN lower waveguiding layer, a 40 nm thick active region with five In 0.15 Ga 0.85 N quantum wells ͑QWs͒ and GaN barriers, and a 180 nm thick GaN upper waveguiding layer. The third-order grating with a perio...

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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Cited by 2,506 publications

References 16 publications

Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Light-curing of dental resins with GaN violet laser diode: The effect of photoinitiator on mechanical strength

Demonstration of an InGaN/GaN-based optically pumped multiquantum well distributed feedback laser using holographically defined third-order gratings

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