InGaN/GaN MQW high brightness LED grown by MOCVD

Zhang, G.Y.; Yang, Zhijian; Tong, Yuzhen; Qin, Zhiyuan; Hu, Xiaobo; Chen, Z.Z.; Ding, Xiao Pan; Lu, Min; Li, Z.H.; Yu, Tongwei; Zhang, L.; Gan, Z. Z.; Zhao, Ying; Yang, C.F.

doi:10.1016/s0925-3467(03)00081-8

Cited by 24 publications

(7 citation statements)

References 5 publications

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“…In contrast to previous approaches using sapphire as the LED microfabrication substrate (Kim et al, 2013; McAlinden et al, 2013; Zhang et al, 2003), we have designed a process that can monolithically integrate InGaN μLEDs onto silicon substrate to achieve minimally invasive, needle-like shank structures using precise silicon micromachining techniques. Silicon also has approximately five times higher thermal conductivity than sapphire, allowing more effective dissipation of heat generated by the μLEDs (Mion et al, 2003).…”

Section: Resultsmentioning

confidence: 99%

“…Instead of coupling extracranial light sources to waveguides, the light sources can be miniaturized and directly integrated at the stimulation sites. InGaN LEDs are potentially attractive for optogenetic applications because their emission wavelength can be tuned across the visible spectrum to target a range of opsins (Zhang et al, 2003). However, GaN-based materials have very limited substrate choices and are conventionally fabricated on either sapphire or SiC wafers for minimal dislocation density (Kukushkin et al, 2008).…”

Section: Introductionmentioning

confidence: 99%

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Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals

Stark

et al. 2015

Neuron

404

375

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SUMMARY We report a scalable method to monolithically integrate microscopic light emitting diodes (μLEDs) and recording sites onto silicon neural probes for optogenetic applications in neuroscience. Each μLED and recording site has dimensions similar to a pyramidal neuron soma, providing confined emission and electrophysiological recording of action potentials and local field activity. We fabricated and implanted the four-shank probes, each integrated with 12 μLEDs and 32 recording sites, into the CA1 pyramidal layer of anesthetized and freely moving mice. Spikes were robustly induced by 60 nW light power, and fast population oscillations were induced at the microwatt range. To demonstrate the spatiotemporal precision of parallel stimulation and recording, we achieved independent control of distinct cells ~50 μm apart and of differential somatodendritic compartments of single neurons. The scalability and spatiotemporal resolution of this monolithic optogenetic tool provides versatility and precision for cellular-level circuit analysis in deep structures of intact, freely moving animals.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals

Stark

et al. 2015

Neuron

404

375

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“…The metal organic chemical vapor deposition (MOCVD) method is the most common method for the growth of InGaN/GaN MQW [3][4][5]. In MOCVD reaction chamber, the height of showerhead has a great influence on the growth rate, utilization and uniformity of metal organic source, its adjustment has been an interesting issue [6].…”

Section: Introductionmentioning

confidence: 99%

Research on InGaN/GaN solar cells using Thoma Swan CCS-MOCVD system

Yu¹,

Sui²,

Huang³

et al. 2014

Proceedings of the International Conference on Logistics, Engineering, Management and Computer Science

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Two InGaN/GaN MQWs samples were grown with two different showerhead gap position 13 and 25 mm, using Thoma Swan CCS-MOCVD system, in order to study the effect of showerhead gap position on the growth of InGaN/GaN MQWs. Through the measurement results, we find that the surface morphology, interface quality, thickness of QB and QW, In composition and PL spectrum of samples are all change significantly. This can attributes to the change of temperature field, flow field and concentration field in the reactor due to the different showerhead gap position. Moreover, the showerhead gap position also affect the pre-reaction in the reactor, which result in converting the thickness of QB, QW and In composition. Consequently, it make the PL spectrum different.

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“…3,4,5 These devices have many applications that are currently widespread such as for cell phone backlighting and as small lighting sources. However there is a large market for these devices as a new source of lighting, or solid state lighting.…”

Section: Introductionmentioning

confidence: 99%

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

Grandusky

Jamil

Jindal

et al. 2005

Fifth International Conference on Solid State Lighting

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The growth of violet light emitting diodes (LEDs) was optimized using a statistical design of experiment (DOE) approach and several important interaction effects were found. The DOEs studied the effect of several variables on the well layer, the barrier layer, and the pAlGaN cladding layer. These variables included the gallium flow rate, the indium flow rate, the growth temperature, and the growth time for the well layer, the ammonia flow in the active region, the barrier growth time, and the Si doping of the barrier, as well as the growth time, growth temperature and Mg doping of the pAlGaN cladding layer. The LEDs were optimized based on combinations of several responses from photoluminescence and electroluminescence measurements. An overall process desirability was obtained, based on achieving the desired wavelength and maximizing the PL intensity and optical output power. Significant interactions between variables played a major role in the optimization of optical output power as well the emission wavelength. The understanding of these interactions led to the optimization of the LEDs both by improvements in the structure and improvements in the quality of the layers. Several of the interactions will be explained based on kinetic models of GaN growth by MOCVD.

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InGaN/GaN MQW high brightness LED grown by MOCVD

Cited by 24 publications

References 5 publications

Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals

Monolithically Integrated μLEDs on Silicon Neural Probes for High-Resolution Optogenetic Studies in Behaving Animals

Research on InGaN/GaN solar cells using Thoma Swan CCS-MOCVD system

Important interaction effects in the growth of InGaN violet light emitting diodes by MOCVD

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