InGaN∕GaN Multiple-Quantum-Well LEDs with Si-Doped Barriers

Hung, Hao Chang; Lam, Kin-Tak; Chang, Shoou‐Jinn; Chen, C. H.; Kuan, Hsu‐Chiang; Sun, Yuanping

doi:10.1149/1.2907150

Cited by 4 publications

(3 citation statements)

References 29 publications

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“…Alteration of these important material properties also significantly impacts optoelectronic and electronic device performance. Various methods, including using nonpolar and semipolar orientations of III‐nitrides were proposed as solutions to these polarization‐related challenges . Removal of polarization was expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III‐nitride light‐emitting diodes (LEDs) known as efficiency droop and the green gap .…”

Section: Introductionmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

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Section: Introductionmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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“…4 Other studies investigate the effects of different Si-doped concentrations in quantum barriers. [5][6][7][8] However, the effects of silicon doping in quantum barriers on LED performance characteristics remain somewhat unclear. 5 Kwon et al investigated the effect of silicon delta doping in the GaN barrier of UV LED.…”

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confidence: 99%

“…The output power and external quantum efficiency of the LED with Si-doped barriers were also found to be larger. 7 Although nitride-based LEDs prepared on sapphire substrates are already commercially available, electrostatic discharge (ESD) is still a problem due to the insulating nature of sapphire substrates. When ESD originates either from the human body or from machine contact with GaN-based LEDs, surge voltage can instantaneously destroy LED devices.…”

mentioning

confidence: 99%

Effect of Silicon Doped Quantum Barriers on Nitride-Based Light Emitting Diodes

Chiang

Chiou

Chang

et al. 2011

J. Electrochem. Soc.

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This study reports the fabrication of InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different Sidoped concentration in GaN barrier layers. The light output power and electrostatic discharge (ESD) characteristics of the LEDs improved as Si-doped concentration in GaN barrier layers increased. This result is attributed to the improvement in hole confinement by doping silicon in the GaN barriers. The light intensity of the LED with a 2 Â 10 18 /cm 3 silicon doping barrier layer was less sensitive to elevated temperature.

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