InGaN/GaN QDs nanorods for light emitters: Processing and properties

Kotlyar, K. P.; Морозов, И. А.; Shubina, K. Yu.; Berezovskaya, T. N.; Dragunova, A. S.; Kryzhanovskaya, N. V.; Kudryashov, D. A.; Lihachev, Alexey; Нащекин, А. В.; Soshnikov, I. P.; Cirlin, G. É.

doi:10.1063/1.5087668

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…The combination of nanostructures and nanomaterials not only enhances the luminous efficiency of μLEDs, but also enables efficient color conversion when combined with QDs [ 98 ]. Figure 16 a illustrates the fabrication process of the device.…”

Section: Using Nanostructures To Enhance μLed Luminous Efficiency And...mentioning

confidence: 99%

Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review

Fang,

Du,

Guo

et al. 2024

Nanomaterials

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Micro-light-emitting diodes (μLEDs), with their advantages of high response speed, long lifespan, high brightness, and reliability, are widely regarded as the core of next-generation display technology. However, due to issues such as high manufacturing costs and low external quantum efficiency (EQE), μLEDs have not yet been truly commercialized. Additionally, the color conversion efficiency (CCE) of quantum dot (QD)-μLEDs is also a major obstacle to its practical application in the display industry. In this review, we systematically summarize the recent applications of nanomaterials and nanostructures in μLEDs and discuss the practical effects of these methods on enhancing the luminous efficiency of μLEDs and the color conversion efficiency of QD-μLEDs. Finally, the challenges and future prospects for the commercialization of μLEDs are proposed.

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Section: Using Nanostructures To Enhance μLed Luminous Efficiency And...mentioning

confidence: 99%

Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review

Fang,

Du,

Guo

et al. 2024

Nanomaterials

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Optical properties of InGaN/GaN QDs nanorods by top-down fabrication after KOH treatment

Kotlyar

Menzelincev²,

Kiseleva³

et al. 2020

J. Phys.: Conf. Ser.

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In this paper, we demonstrate and investigate the process of wet chemical etching in KOH solutions of InGaN quantum dots/GaN nanorods with the average height of heterostructure 330 nm and lateral size up to 120 nm. Morphological studying showed a significant thinning of nanorods to 40-80 nm and the shape transformation from trapezoidal to cylindrical, which led to the formation of an optimal resonator for the light-based GaN material. In this case, the photoluminescence intensity of the structure with nanorods increased in comparison with the initial planar LED structure, decreasing the impact of sidewall defects, which in turn led to the dramatic increase of the photoluminescence intensity. Further etching leads to a thinning of the GaN-p type block of the nanorods and the formation of a sharpened top, which is accompanied by a decrease in the photoluminescence intensity.

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InGaN/GaN QDs nanorods for light emitters: Processing and properties

Cited by 2 publications

References 6 publications

Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review

Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review

Optical properties of InGaN/GaN QDs nanorods by top-down fabrication after KOH treatment

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