Abstract:InGaN light-emitting diodes (LEDs) embedded with air voids and a gallium oxide (Ga 2 O 3 ) layer were fabricated through a photoelectrochemical (PEC) oxidation process. The epitaxial lateral overgrowth process occurred at the PEC oxidized nanorods to form the air-voids structure. The light output power of the treated LED with the air-voids structure had a 70% enhancement compared with a non-treated LED at a 20 mA operation current. High internal quantum efficiency and low piezoelectric field were measured in t… Show more
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