InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties

Wu, Kui; Pan, Yingjun; Liu, C.

doi:10.1016/j.apsusc.2009.02.065

Cited by 19 publications

(15 citation statements)

References 13 publications

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“…While most In x Ga 1Àx N columnar growth is self-catalyzed by the gallium atoms, some authors report the need for another metal catalyst such as gold to initiate nanocolumn growth. [86] A similar but slightly different growth mechanism for In x Ga 1Àx N nanorods was also reported by Wu et al [82] This nanorod growth was observed in situ using a high-temperature transmission electron microscope (TEM). In this process, In x Ga 1Àx N is first grown epitaxially until the critical layer is reached.…”

Section: Advanced Microstructures For In X Ga 1àx N Pvsupporting

confidence: 66%

“…For this purpose, an n-type GaN window layer has been shown to improve the open-circuit voltage and fill factor of an In x Ga 1Àx N solar cell. [76] A variety of techniques has been used to grow In x Ga 1Àx N/GaN nanocolumnar structures: radio-frequency molecular beam epitaxy (MBE), [82][83][84] plasmaassisted MBE, [85] CVD, [81,86] hydride vapor phase epitaxy (HVPE), [80,87] and plasma-assisted evaporation. [30,88,89] Regardless of the deposition technique, the growth of In x Ga 1Àx N nanocolumns is most dependent on three key deposition parameters: temperature, growth rate, and the III-V ratio.…”

Section: Advanced Microstructures For In X Ga 1àx N Pvmentioning

confidence: 99%

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Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

McLaughlin

Pearce

2013

Metall Mater Trans A

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Section: Advanced Microstructures For In X Ga 1àx N Pvsupporting

confidence: 66%

Section: Advanced Microstructures For In X Ga 1àx N Pvmentioning

confidence: 99%

Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

McLaughlin

Pearce

2013

Metall Mater Trans A

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“…Many publications have already reported on the growth of homoepitaxial III-nitride NWs by plasma assisted molecular beam epitaxy ͑PAMBE͒, [10][11][12][13][14][15][16][17][18][19][20] including InGaN NWs on Si substrates. 21,22 However, to exploit the whole range of optoelectronic devices compatible with a NW design, the possibility to realize axial as well as radial hetero-and quantum structures is essential. So far these efforts have focused on introducing thin quantum disks into the NWs ͑Refs.…”

Section: Structural and Optical Properties Of Ingan-gan Nanowire Hetementioning

confidence: 99%

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

Limbach

Gotschke

Stoïca

et al. 2011

Journal of Applied Physics

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InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

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“…[5][6][7][8][9][10][11][12][13] To date, however, there have been only a few reports on the MBE growth of ternary InGaN nanowires (see Refs. 7,14 for examples). In this work, the MBE growth and characterization of InGaN wires with high indium compositions is reported.…”

mentioning

confidence: 99%

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

Goodman

Protasenko

Verma

et al. 2011

Journal of Applied Physics

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Indium gallium nitride nanowires show promise as being prime candidates for optical devices since they can be grown with band gaps spanning the visible spectra, while at the same time can be composed of stress free material. The goal of the work presented here was to obtain InGaN nanowires producing green emission at room temperature. Two growth recipes were found to yield InGaN nanowire growth on silicon substrates using plasma-assisted molecular beam epitaxy. At room temperature the photoluminescence (PL) of wire ensembles indeed peaked at 530 nm but, in addition, it was discovered that at low temperatures the emission often covered a broader (360–700 nm) spectrum. This broad optical range indicated indium content fluctuations in individual wires, wire-to-wire fluctuations, or a combination of the two. EDX measurements performed on single wires confirmed this hypothesis and correlated well with PL data. Low temperature PL studies of InGaN individual wires also revealed interwire and intrawire inhomogeneity of emission spectra stemming from a nonuniform indium distribution. The emission quantum yield for bright single wires was extracted to be more than 50% at 4 K. The findings suggest that the wire surfaces do not efficiently quench optical emission at low temperatures. These defect-free wires offer not only a potential path for green emitters, but also as integrated phosphors for broad spectral emission.

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InGaN nanorod arrays grown by molecular beam epitaxy: Growth mechanism structural and optical properties

Cited by 19 publications

References 13 publications

Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

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