InGaN Solar Cells: Present State of the Art and Important Challenges

Bhuiyan, Ashraful G.; Sugita, Kenichiro; Hashimoto, Akihiro; Yamamoto, Akio

doi:10.1109/jphotov.2012.2193384

Cited by 213 publications

(141 citation statements)

References 114 publications

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“…On photovoltaic matters, GaN has been suitable to get InGaN alloys and to design III-nitride multi-junction solar cell structures for greatest efficiency [3]. However, the experimental results have showed low conversion efficiency due to some challenges in fabrication of GaN films (such as p-type doping control [4] and the lack of a suitable substrate [5]) and InGaN films (degradation of epitaxial quality at high In compositions [6]).…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of c-GaN/GaAs single heterojunction solar cells

et al. 2017

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In this work a theoretical study of electrical behavior for a c-GaN/GaAs heterostructure as a photovoltaic device through a two-dimensional (2D) finite element numerical simulation is presented for a first time. I-V curves and electrical parameters like short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) were obtained for n-i-p and n-p heterostructures with different thicknesses and doping of the layers by modeling heterostructures with characteristics parameters of this materials previously reported. As a result, an increment on Isc was observed by extending the thickness of i-GaAs layer from 12 mA/cm 2 for thinner heterostructures to a maximum of ~32 mA/cm 2 for heterostructures with i-GaAs layer >3000 nm and a decrease in Voc and FF in the range from ~1.06 V and 0.89 for n-p heterostructures to 0.75 V and 0.7 respectively for thicker i-GaAs layers allowing estimate maximum efficiencies between 23 and 25% for n-i-p and n-p configurations, respectively. This study allows demonstrating the potential of this type of heterostructures for solar cells applications, considering the possibility of using p-doping GaAs substrates for photovoltaics based in GaN.

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Section: Introductionmentioning

confidence: 99%

Theoretical study of c-GaN/GaAs single heterojunction solar cells

et al. 2017

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“…One of the most promising methods to fight versus these problems is solar energy. Solar energy is a much greater source of energy than fossil based energy sources and other renewable energy sources [1]. Photovoltaics are systems which directly convert sunlight into electrical energy.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore high efficient solar cells are very important and one of the most worked on issues during the last ten years in the field of physics [2,3]. The development of solar cells with a high performance by using In x Ga 1Àx N is a very important development compared with solar cells made of Si and III-V materials [1,4].…”

Section: Introductionmentioning

confidence: 99%

Examination of the temperature related structural defects of InGaN/GaN solar cells

Durukan

Bayal

Kurtuluş

et al. 2015

Superlattices and Microstructures

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a b s t r a c tIn this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350°C. The defect density increased on the GaN layer starting from 350°C and reaching above 400°C. A similar trend is observed on the InGaN layer, too.

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“…Thanks to their band gap spanning almost the whole solar spectrum from 0.7 eV (InN) to 3.4 eV (GaN), InGaN alloys are considered as promising candidates for high-efficiency photovoltaic devices [1,2]. This makes the development of all-InGaN multijunction solar cells with an overall efficiency larger than 50% theoretically possible.…”

Section: Introductionmentioning

confidence: 99%

“…This is not an easy task. Reports of InGaN-based junctions with an In mole fraction exceeding 0.3 are rare [1] and the performance of InGaN-based photovoltaic cells, whatever the In content, still remain far from the theoretical ones [3][4][5][6]. Issues such as strong phase separation and relaxation of the layer due to lattice mismatch with the substrate, lead to InGaN layers with large dislocation density and In-clustering, even if absorbing layers in the form of a multiple quantum well [6] have been used to delay strain relaxation.…”

Section: Introductionmentioning

confidence: 99%