InGaP/GaAs WLAN power amplifier with detector using on-chip coupler

Dang, Trung-Sinh; Tran, Anh-Dung; Ham, Sun-Jun; Park, Hyun-Woo; Hien, Lai-Ngoc-Duy; Yoon, Sang Wook

doi:10.1109/apmc.2013.6694962

Cited by 3 publications

(1 citation statement)

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“…It can improve the linearity of the PA but the control circuit is complex and needs the operating point changed with the RF signal accurately. Reference [7] designs an InGaP/GaAs WLAN PA and utilizes the coupler on the chip and the match circuit on the PCB to improve the voltage of the power detector. Therefore, the paper utilizes many techniques to improve both the efficiency and linearity of the PA.…”

Section: Introductionmentioning

confidence: 99%

A highly linear power amplifier for WLAN

2016

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A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 m InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P 1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus.

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Section: Introductionmentioning

confidence: 99%