InGaZnO semiconductor thin film fabricated using pulsed laser deposition

Abstract

The InGaZnO thin films are fabricated on the quartz glass using pulsed laser deposition (PLD), where the target is prepared by mixing the Ga(2)O(3), In(2)O(3), and ZnO powders at a mol ratio of 1:1:8 before the solid-state reactions in a tube furnace at the atmospheric pressure. The product thin films were characterized comprehensively by X-ray diffraction, atomic force microscopy, Hall-effect investigation, and X-ray photoelectron spectroscopy. Thus, we demonstrate semiconductor thin-film materials with high smoothness, high transmittance in visible region, and excellent electrical properties.

Pulsed laser deposited InGaZnO thin film on silica glass

“…The IGZO target with a molar ratio of Ga 2 O 3 :In 2 O 3 :ZnO= 1: 8: 1 was prepared at 1400°C by conventional solid state reaction method [14]. A frequency-tripled (355 nm) Nd:YAG laser (GCR-170, Spectra-Physics) with a pulse duration of 10 ns, a repetition rate of 10 Hz and a pulse energy of 30 mJ was used to ablate the ceramic target.…”

Substrate temperature influence on the properties of InGaZnO thin films grown by PLD technique

“…The films grown at relative low temperature such as RT and 200 °C, compared with the quartz glass XRD pattern, have no sharp peak at all, indicating the films are with no obvious crystalline structure. In other word, the IGZO films formed amorphous phases [9,10]. With the temperature increased, the XRD spectrum emerges a sharp peak around 32 ° which was deposited at 400 °C, and the intensity of peak value is continuously elevated up to 600 °C.…”

Effects of working pressure on morphology, structural, electrical and optical properties of a-InGaZnO thin films

“…Using pulsed-laser deposition (PLD) [10][11][12] and RF magnetron sputtering [13,14], it can be deposited in its amorphous phase at a low temperature. The low production costs and high uniformity of a-IGZO thin-film transistors (TFTs) are other advantages, the latter being advantageous for use in large-area displays.…”

“…10 V cm) and Corning glass substrates by RF magnetron -Ga-Zn-O (a-IGZO) thin films ($200 nm thickness) were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates at various working pressures (0.67-2.67 Pa)…”