1974 International Electron Devices Meeting (IEDM) 1974
DOI: 10.1109/iedm.1974.6219664
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Inherent memory effects in ZnS:Mn thin film EL devices

Abstract: Remarkable hysteresis were found to excist in a thin film multilayer EL device consisting of a

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Cited by 12 publications
(2 citation statements)
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“…Inorganic ac-EL devices with a double-insulating-layer structure, which is very similar to our organic ac-EL device structure, have been studied. 13,14) The emission mechanism of these inorganic ac-EL devices is understood to be the impact excitation of luminescent centers by hot electrons injected from the interface states between the phosphor layer and insulating layer via high-field assisted tunneling. The charge velocity of electrons for the inorganic EL devices is estimated to be approximately 1:0 Â 10 8 cm s À1 assuming that the electron mobility to be 1:0 Â 10 2 cm 2 V À1 s À1 and applied field of 1:0 Â 10 6 V cm À1 .…”
Section: Drive Conditionsmentioning
confidence: 99%
“…Inorganic ac-EL devices with a double-insulating-layer structure, which is very similar to our organic ac-EL device structure, have been studied. 13,14) The emission mechanism of these inorganic ac-EL devices is understood to be the impact excitation of luminescent centers by hot electrons injected from the interface states between the phosphor layer and insulating layer via high-field assisted tunneling. The charge velocity of electrons for the inorganic EL devices is estimated to be approximately 1:0 Â 10 8 cm s À1 assuming that the electron mobility to be 1:0 Â 10 2 cm 2 V À1 s À1 and applied field of 1:0 Â 10 6 V cm À1 .…”
Section: Drive Conditionsmentioning
confidence: 99%
“…These films, under certain processing conditions, possess a brightness vs voltage hysteresis effect. This allows the use of a sustaining ac voltage coupled with momentarily increased or decreased levels for control of the ON and OFF conditions somewhat similar to an ac plasma panel (15).…”
Section: Field Excitation Powder Elmentioning
confidence: 99%