Inherent selective pulsed chemical vapor deposition of aluminum oxide in nm scale

Cho, Yunil; Huang, James; Zhang, Zichen; Wang, Kesong; Lee, Ping-Che; Kim, Chanyoung; Wong, Kam W.; Nemani, Srinivas; Yieh, Ellie; Kummel, Andrew C.

doi:10.1016/j.apsusc.2023.156824

Cited by 9 publications

(9 citation statements)

References 25 publications

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“…26,28 For ATSB single-precursor CVD, experiments were conducted at 330 °C for better nucleation and faster growth. 27 Aniline passivation was performed before any CVD processes by trapping the samples inside the deposition chamber (without pumping) for 40 min at 250−350 °C with a constant pressure of 780 mTorr.…”

Section: Methodsmentioning

confidence: 99%

“…For HfO 2 and TiO 2 single-precursor CVD processes, experiments were carried out at 300 °C which is the optimized dosing temperature according to previous research. , For ATSB single-precursor CVD, experiments were conducted at 330 °C for better nucleation and faster growth . Aniline passivation was performed before any CVD processes by trapping the samples inside the deposition chamber (without pumping) for 40 min at 250–350 °C with a constant pressure of 780 mTorr.…”

Section: Methodsmentioning

confidence: 99%

“…26 Selective water-free single-precursor Al 2 O 3 -pulsed CVD has also been studied by Cho et al using aluminum-tri-sec-butoxide (ATSB) as the precursor. 27 At 300 °C, HfO 2 deposition was achieved by pulsed dosing of the hafnium tert-butoxide (Hf(O t Bu) 4 ) precursor. When pulsed gas-phase Hf(O t Bu) 4 molecules adsorb onto the substrate surface, it decomposes into HfO/HfOH and O t Bu/ t Bu ligands.…”

Section: Introductionmentioning

confidence: 99%

“…Selective water-free single-precursor HfO 2 -pulsed CVD deposition on Si, SiO 2 , and SiCOH was previously reported . Selective water-free single-precursor Al 2 O 3 -pulsed CVD has also been studied by Cho et al using aluminum-tri- sec -butoxide (ATSB) as the precursor . At 300 °C, HfO 2 deposition was achieved by pulsed dosing of the hafnium tert -butoxide (Hf(O t Bu) 4 ) precursor.…”

Section: Introductionmentioning

confidence: 99%

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Dielectric-on-Dielectric Achieved on SiO₂in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Huang

Cho

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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Selective and smooth dielectric-on-dielectric was achieved by water-free single-precursor chemical vapor deposition (CVD) processes with the help of aniline passivation. Aniline selective passivation was demonstrated on W surfaces in preference to SiO 2 at 250, 300, and 330 °C. After aniline passivation, selective HfO 2 , Al 2 O 3 , and TiO 2 were deposited only on the HF-cleaned SiO 2 surface by water-free single-precursor CVD using hafnium tert-butoxide Hf(O t Bu) 4 , aluminum-tri-sec-butoxide (ATSB), and titanium isopropoxide Ti(O i Pr) 4 as the precursor reactants, respectively. Hf(O t Bu) 4 and Ti(O i Pr) 4 single-precursor CVD was carried out at 300 °C, while the ATSB CVD process was conducted at 330 °C. HfO 2 and Al 2 O 3 nanoselectivity tests were performed on W/ SiO 2 patterned samples. Transmission electron microscopy images of the W/SiO 2 patterned samples after deposition demonstrated nanoselectivity and low surface roughness of HfO 2 and Al 2 O 3 deposition on the SiO 2 regions only.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dielectric-on-Dielectric Achieved on SiO₂in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Huang

Cho

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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“…Introducing TBS resulted in a selectivity loss of approximately 2 nm compared to the pure pulsed ATSB CCVD process described in the previous research. 9 The hybrid half-supercycle process with a lower TBS dosing substrate temperature at 150 °C was investigated, along with a similar half-supercycle process involving a 120 s TBS dosing at the same temperature. The XPS chemical composition charts for these experiments can be found in Figures S9 and S10.…”

Section: Sio X /Alomentioning

confidence: 99%

Low-k SiO_x/AlO_x Nanolaminate Dielectric on Dielectric Achieved by Hybrid Pulsed Chemical Vapor Deposition

Huang,

Mu,

Cho

et al. 2023

ACS Appl. Mater. Interfaces

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Selective and smooth low-k SiO x /AlO x nanolaminate dielectric on dielectric (DOD) was achieved by a hybrid water-free pulsed CVD process consisting of 50 pulses of ATSB (tris(2-butoxy)aluminum) at 330 °C and a 60 s TBS (tris(tert-butoxy)silanol) exposure at 200 °C. Aniline selective passivation was demonstrated on W surfaces in preference to Si3N4 and SiO2 at 300 °C. At 200 °C, TBS pulsed CVD exhibited no growth on W or SiO2, but its growth was catalyzed by AlO x . Using a two-temperature pulsed CVD process, ∼2.7 nm selective SiO x /AlO x nanolaminate was deposited on Si3N4 in preference to aniline passivated W. Nanoselectivity was confirmed and demonstrated on nanoscale W/SiO2 patterned samples by TEM analysis. For a 1:1 Si:Al ratio, a dielectric constant (k) value of 3.3 was measured. For a 2:1 Si:Al ratio, a dielectric constant (k) value of 2.5 was measured. The k value well below that of Al2O3 and SiO2 is consistent with the formation of a low-density, low-k SiO2/Al2O3 nanolaminate in a purely thermal process. This is the first report of a further thermal CVD process for deposition of a low-k dielectric and the first report for a selective low-k process on the nanoscale.

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N2 reduction to NH3 on surfaces of Co-Al18P18, Ni-Al21N21, Fe-B24N24, Mn-B27P27, Ti-C60 and Cu-Si72 catalysts

Hsu,

Mustafa,

Yadav

et al. 2024

J Mol Model

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Inherent selective pulsed chemical vapor deposition of aluminum oxide in nm scale

Cited by 9 publications

References 25 publications

Dielectric-on-Dielectric Achieved on SiO₂in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Dielectric-on-Dielectric Achieved on SiO₂in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Low-k SiO_x/AlO_x Nanolaminate Dielectric on Dielectric Achieved by Hybrid Pulsed Chemical Vapor Deposition

N2 reduction to NH3 on surfaces of Co-Al18P18, Ni-Al21N21, Fe-B24N24, Mn-B27P27, Ti-C60 and Cu-Si72 catalysts

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Inherent selective pulsed chemical vapor deposition of aluminum oxide in nm scale

Cited by 9 publications

References 25 publications

Dielectric-on-Dielectric Achieved on SiO2in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Dielectric-on-Dielectric Achieved on SiO2in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Low-k SiOx/AlOx Nanolaminate Dielectric on Dielectric Achieved by Hybrid Pulsed Chemical Vapor Deposition

N2 reduction to NH3 on surfaces of Co-Al18P18, Ni-Al21N21, Fe-B24N24, Mn-B27P27, Ti-C60 and Cu-Si72 catalysts

Contact Info

Product

Resources

About

Dielectric-on-Dielectric Achieved on SiO₂in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Dielectric-on-Dielectric Achieved on SiO₂in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation

Low-k SiO_x/AlO_x Nanolaminate Dielectric on Dielectric Achieved by Hybrid Pulsed Chemical Vapor Deposition