Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

Waters, R. G.; Bour, D. P.; Yellen, S.L.; Ruggieri, Neil F.

doi:10.1109/68.58039

Cited by 109 publications

(13 citation statements)

References 10 publications

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“…Our achievements in the OMVPE growth of these structures will be reported elsewhere1 . In summary, though, we have demonstrated, for our development reactor, that the same level of performance in wavelength control can be obtained for the InAlGaAs lasers as has been achieved for the growth of A1GaAs devices 4…”

Section: Wavelength Challengesupporting

confidence: 51%

Strained quaternary InAlGaAs 810-nm lasers

Baumann¹,

Yellen²,

Juhala³

et al. 1993

SPIE Proceedings

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In 1991, strained InAlGaAs quantum well lasers were first proposed as alternatives to AlGaAs lasers for various applications, including solid-state pumping. Enhanced reliability was the rationale for their development, having been inspired by earlier observations of lattice hardening in strained InGaAs lasers. The hoped-for dark-line defect (DLD) suppression as well as a threshold current advantage for this system have already been documented. In this update, we will present further aspects of this work, including long-term reliability, maximum (catastrophic) power limits, epitaxial structure design bounds and parametric crystal growth investigations. Our work has enabled the demonstration of 15 W cw linear arrays and pulsed V-Groove Phased Arrays. Their performance and potential applications will also be discussed.

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Section: Wavelength Challengesupporting

confidence: 51%

Strained quaternary InAlGaAs 810-nm lasers

Baumann¹,

Yellen²,

Juhala³

et al. 1993

SPIE Proceedings

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“…Focused ion beam analysis was used to prepare TEM samples from degraded devices, where dark line defects were observed from EBIC. [19,20]. However, most of the reports so far have exclusively dealt with single-mode lasers.…”

Section: Broad-area Lasersmentioning

confidence: 99%

Catastrophic facet and bulk degradation in high power multi-mode InGaAs strained quantum well single emitters

et al. 2009

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Extensive investigations by a number of groups have identified catastrophic sudden degradation as the main failure mode in both single-mode and multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers. Significant progress made in performance characteristics of broad-area InGaAs strained QW single emitters in recent years has led to an optical output power of over 20W and a power conversion efficiency of over 70% under CW operation. However, unlike 980nm single-mode lasers that have shown high reliability operation under a high optical power density of ~50MW/cm 2 , broad-area lasers have not achieved the same level of reliability even under a much lower optical power density of ~5MW/cm 2 . This paper investigates possible mechanisms that prevent broad-area lasers from achieving high reliability operation by performing accelerated lifetests of these devices and in-depth failure mode analyses of degraded devices with various destructive and non-destructive techniques including EBIC, FIB, and HR-TEM techniques. The diode lasers that we have investigated are commercial MOCVD-grown broad-area strained InGaAs single QW lasers at ~975nm. Both passivated and unpassivated broad-area lasers were studied that yielded catastrophic failures at the front facet and also in the bulk. To investigate the role that generation and propagation of defects plays in degradation processes via recombination enhanced defect reaction (REDR), EBIC was employed to study dark line defects in degraded lasers, failed under different stress conditions, and the correlation between DLDs and stress levels is reported. FIB was then employed to prepare TEM samples from the DLD areas for cross-sectional HR-TEM analysis.

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“…SBMQWs are also inherently free of mismatch dislocations, reducing further the potential for excessive dark current. In addition, SBMQW solar cells operating at high temperature for extended periods could show a long device lifetime, since defect propagation may be pinned by the multiple interfaces of the MQW and the inclusion of indium [3]. Fig.…”

Section: Strain-balanced Ingaas Gaasp Mqw (Sbmqw) Solar Cellsmentioning

confidence: 99%