Inhibition Effect of a Laser on Thickness Increase of p-Type Porous Silicon in Electrochemical Anodizing

Chiang, Cheng‐Chin; Juan, Pi-Chun; Lee, T. H.

doi:10.1149/2.0851603jes

Cited by 14 publications

(12 citation statements)

References 22 publications

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“…Those porous silicon layer structures were in nano-scale, as confirmed in our previous studies. 24 In this work, several nanometres of NPS layers of various spectral colours were formed by varying the laser power and the BEA; thus, the anti-etching effect of the porous silicon layer was confirmed. When low laser power (0.1 mW) was used, the porous silicon was not confirmed, because the anti-etching phenomenon was not obvious.…”

Section: Resultsmentioning

confidence: 59%

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Immanuel

Chiang

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

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The effect of using high-power He-Cd laser irradiation for electrochemical etching on p-type silicon in hydrofluoric (HF) acid solution was investigated. Laser irradiation on the silicon surface combined with electrochemical etching process successfully controlled the formation of porous silicon (PS) in nano-scale structure. On the surface of the laser-irradiated silicon surface, the formation of nano porous silicon (NPS) during electrochemical etching was controlled by the laser wavelength and power. Then, the NPS was analysed along with physicochemical properties using analytical techniques. The luminous flux of the laser power was controlled with the help of the integrating sphere system. We designated this as the bandgap energy absorption (BEA) of electro-thermal reaction. The fabrication of NPS with laser-irradiation/electrochemical etching technology was feasible by controlling laser power (20 mW) up to a high luminescence flux value of 223 lm. NPS was used in the piratical application of microelectronic device.

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Section: Resultsmentioning

confidence: 59%

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Immanuel

Chiang

Lee³

et al. 2021

ECS J. Solid State Sci. Technol.

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“…Hence, Si nanocrystals may be perfectly formed within the tiny spaces, which are nanoscale in diameter. 48,49 Furthermore, PL measurements are a very simple method of detecting the possible existence of nanocrystals. 50 For etching silicon in HF (aq) , the Cu catalysis half-reaction comprises the half-chemical reaction at the 'anode', thereby inducing a hole current as follows:…”

Section: Cumentioning

confidence: 99%

Photoluminescent or Blackened Silicon Surfaces Synthesized with Copper-assisted Chemical Etching: For Energy Applications

Kuo¹,

Ku²,

Lee³

2020

ECS J. Solid State Sci. Technol.

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The metal-assisted chemical etching (MACE) of silicon-based substrates can fabricate nanostructures for various energy applications. The drawback of using copper as a replacement for noble metals in MACE (i.e. Cu-ACE) is the self-dissolution of Cu during processing. However, the implementation of two-step processing, including electroless metal deposition and oxidant (H2O2)–assisted hydrofluoric etching, solves the issue. Here, we determined that when p ++ -type silicon was applied in the Cu-ACE process, a photoluminescent silicon layer appeared on the etched surface. This result was surprising because photoluminescent silicon is fairly difficult to achieve with regular MACE processing and p ++-type silicon is also unsuitable for MACE processing, even when used as an ‘etch-stop’ substrate. On the other hand, when using ultraviolet (UV) irradiation with Cu-ACE, a blackened silicon surface, rather than photoluminescent silicon, developed. Here, we demonstrate a technique for either producing a photoluminescent silicon surface or blackening the silicon surface by single Cu-ACE processing. Cu-ACE processing can be developed into a cost-efficient production technology for silicon-based energy applications, such as silicon photonics and silicon solar cells.

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“…Figure 1 shows the effect of the quasi-Fermi level formed by laser irradiation with anodization. For example, in the anodization of p-type silicon, the appearance of an n-quasi-Fermi level due to laser irradiation ( Figure 1 a) inhibits etching of silicon 17 and the formation of a green PL layer ( Figure 1 b). In contrast, the p-quasi-Fermi level that appears with laser irradiation ( Figure 1 c) promotes etching of the irradiated region on n-type silicon, forming a yellow PL spot ( Figure 1 d).…”

Section: Introductionmentioning

confidence: 99%

Forming a Photoluminescent Layer on Another Surface in the Dark through Lasering of N-Type Silicon in an Electrolyte

2020

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Photoetching of n-type silicon induces a photoluminescent (PL) layer containing nanocrystals on the irradiated surface, usually through band gap absorption (wavelength <1100 nm). Here, we demonstrate the formation of a PL layer restricted to the backside surface, not the irradiated surface, by using a 1064 nm Nd:YAG laser. A nanoscale structure of the PL layer is achieved by merely modifying the electrolyte concentration without adding oxidants. To illustrate the working principle, we submit the hypothesis of a quasi-pn structure based on the theory of a quasi-Fermi level. Because of the “injection current” effect due to the quasi-pn structure, the hole current promoted by free-carrier absorption flows toward the backside surface, leading to anodization. This result is remarkable because anodization of n-type silicon is very hard to achieve with just an etchant in the dark.

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Inhibition Effect of a Laser on Thickness Increase of p-Type Porous Silicon in Electrochemical Anodizing

Cited by 14 publications

References 22 publications

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

Photoluminescent or Blackened Silicon Surfaces Synthesized with Copper-assisted Chemical Etching: For Energy Applications

Forming a Photoluminescent Layer on Another Surface in the Dark through Lasering of N-Type Silicon in an Electrolyte

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