2013
DOI: 10.1149/05806.0151ecst
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Inhibition of Copper Corrosion by Removal of H2O2 From CO2-Dissolved Water Using Palladium Catalysts

Abstract: We have found that the dissolution rate of a copper metal film which is easy to be corroded oxidatively in CO 2 -dissolved water (CO 2 DIW) used as rinse water for wafer cleaning processes can be decreased to one-third by removal of H 2 O 2 from CO 2 DIW. DIW in semiconductor factories normally contains 10~40 µg/L H 2 O 2 , which remains also in CO 2 DIW. We have developed a palladiumloaded monolithic anion exchange resin (Pd-M) as a catalyst that is able to remove H 2 O 2 in DIW down to below 1 µg/L at an ext… Show more

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Cited by 10 publications
(5 citation statements)
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“…Excess H 2 O 2 in the solution may accelerate MicroCuZn corrosion and thereby cause leaching of Cu and Zn ions into the bulk solution. 74 Pham et al 75 conrmed that Fenton-like reaction can be initiated by Cu ions at neutral pH and Hobbs and Abbot 73 reported pNDA bleaching by ionic Cu at comparable magnitude as measured in this study. H 2 O 2 can reduce Cu 2+ , generating O 2 c À and Cu + , which then can catalyze H 2 O 2 to produce cOH and Cu 2+ (eqn ( 6) and ( 7)).…”
Section: Hydroxyl Radical Productionsupporting
confidence: 74%
“…Excess H 2 O 2 in the solution may accelerate MicroCuZn corrosion and thereby cause leaching of Cu and Zn ions into the bulk solution. 74 Pham et al 75 conrmed that Fenton-like reaction can be initiated by Cu ions at neutral pH and Hobbs and Abbot 73 reported pNDA bleaching by ionic Cu at comparable magnitude as measured in this study. H 2 O 2 can reduce Cu 2+ , generating O 2 c À and Cu + , which then can catalyze H 2 O 2 to produce cOH and Cu 2+ (eqn ( 6) and ( 7)).…”
Section: Hydroxyl Radical Productionsupporting
confidence: 74%
“…In this experiments, original UPW contained 15 µg/L H 2 O 2 . The etching rate of copper films rinsed by UPW are shown in Figure 3 with the data of previous CO 2 UPW work [4]. It is clearly shown that removal of H 2 O 2 in UPW suppressed the etching rate of copper films with the case of UPW rinsing.…”
Section: Resultsmentioning
confidence: 58%
“…Considering the situation, we have developed a palladium-loaded monolithic anion exchange resin (Pd-M) as a catalyst that is able to remove H 2 O 2 from UPW down to below 1 µg/L at an extremely high flow rate (space velocity SV = 6,000 h -1 ), with no detectable elution of impurities [1,2]. Furthermore, we have found that the dissolution rate of copper which is easy to be corroded oxidatively in CO 2 -dissolved water (CO 2 UPW) [3] can be decreased to one-third by removal of H 2 O 2 from CO 2 UPW using Pd-M catalyst [4]. In this study, we present the effects of H 2 O 2 removal from UPW and diluted hydrofluoric acid (DHF) on the surfaces of copper, molybdenum and silicon.…”
Section: Introductionmentioning
confidence: 89%
“…The solution to the former issue is to employ organic-solvent cleaning 21 and that for the latter case is to lower the oxidation-reduction potential of water by eliminating dissolved oxygen in water or more preferably by using electrolyzed reducing water or hydrogen water. 23 It should be noted that UV treatments of water to eliminate total organic carbons in on-site ultra-pure water plants generate unexpected hydrogen peroxide in the ppb range in water, 24 which can cause metal corrosion 25 as well as chemical oxidation of the silicon surfaces.…”
Section: Water-caused Problems In Device Fabricationmentioning
confidence: 99%