Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

Abstract

We report the current-voltage (I -V ) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I -V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I -V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I -V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A was 10.32 A cm 2 K 2 , which is close to the theoretical value of 9.4 A cm 2 K 2 for n-InP. The temperature dependence of the I -V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I -V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

Implication of the Temperature-Dependent Charge Barrier Height of Amorphous Germanium Contact Detector in Searching for Rare Event Physics

“…To calculate J 0 from equation 2, the barrier height should be treated as constant with respect to temperature. However, several pioneers have clearly demonstrated that the barrier height is not constant with temperature [41][42][43][44][45][46][47]. Such a phenomenon indicates there is a barrier inhomogeneity at the interface of a-Ge and crystalline Ge.…”

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

“…In the second approach, we used an analytical potential fluctuation model employing different types of distribution function at the interface on the spatially inhomogeneous SBDs [28], Then, we have used equation 15:…”

Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K- 425 K)

“…Semiconductors of the (III-V) family have important applications in the field of electronics and optoelectronics. Recently, (III-V) semiconductors have received a great deal of attention for the fabrication of microwave devices as well as integrated circuits used in modern high-speed optical communication systems [1][2][3][4]. Among the most widely used III-V compounds are GaN, GaAs, GaP, and InP, because of their band gap to their wide band gaps, stability at high temperatures, electron mobility, hardness, low iconicity and high terminal conductivity [4][5][6][7][8].…”

“…InP binary compound is a direct band gap semiconductor with E g = 1.423 eV and lattice parameter a= 5.869 at 300 K [6]. This binary is a promising material for detectors in the long-wavelength spectral region, light emitters, solar cell application, and microwave field-effect transistors [2,[13][14][15][16]. On the other hand, The InP binary compound has received a great deal of attention for the fabrication of Schottky diodes (Metal-InP).…”