Initial growth mechanism of high-quality CVD diamond on Ir/sapphire substrate compared with Ir/MgO substrate

Kasu, Makoto; Takaya, Ryota; Masaki, Ryo; Kim, Seong-Woo

doi:10.1016/j.diamond.2022.109287

Cited by 4 publications

(2 citation statements)

References 45 publications

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“…MPCVD provides a highly repeatable and uniform boron-doped homoepitaxial growth process for diamond. Through MPCVD synthesis, lightly boron-doped diamond with a room-temperature carrier mobility of approximately 1000 cm 2 /(V ⋅ s) can be readily obtained (20,21). However, due to the highly explosive and toxic nature of borane and trimethyl boron (TMB) gases, their use in experimental procedures poses significant safety risks (22).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

Guo,

Tian,

Wang

et al. 2024

ECS Trans.

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In this study, n-type doped single-crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single-crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.5×10-4 Ω·cm. Furthermore, p-type doped single-crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor Deposition（MPCVD）. It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers.

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Section: Introductionmentioning

confidence: 99%

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

Guo,

Tian,

Wang

et al. 2024

ECS Trans.

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“…By using diamond electronics, not only the thermal management demands for conventional semiconductors be alleviated but also these devices are more energy efficient and can endure much higher breakdown voltages and harsh environments. On the other hand, with the development of diamond growth technologies, [ 2 ] power electronics, [ 3 ] spintronics, [ 4 ] and microelectromechanical system (MEMS) sensors [ 5 ] operatable under high‐temperature and strong‐radiation conditions, the demand for peripheral circuitry based on diamond CMOS devices has increased for monolithic integration. [ 6 ] P‐type diamonds are readily accessible through bulk boron doping or surface transfer doping of a hydrogen‐terminated diamond surface.…”

Section: Introductionmentioning

confidence: 99%

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Liao,

Sun,

Koizumi

2024

Advanced Science

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Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n‐ and p‐channel conductivity are required for the development of diamond complementary metal‐oxide‐semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n‐type channel MOS field‐effect transistors (MOSFETs). Here, electronic‐grade phosphorus‐doped n‐type diamond epilayer with an atomically flat surface based on step‐flow nucleation mode is fabricated. Consequently, n‐channel diamond MOSFETs are demonstrated. The n‐type diamond MOSFETs exhibit a high field‐effect mobility around 150 cm2 V−1 s−1 at 573 K, which is the highest among all the n‐channel MOSFETs based on wide‐bandgap semiconductors. This work enables the development of energy‐efficient and high‐reliability CMOS integrated circuits for high‐power electronics, integrated spintronics, and extreme sensors under harsh environments.

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Recent progress on heteroepitaxial growth of single crystal diamond films

Uwihoreye,

Hu,

Cao

et al. 2024

Electron

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Diamond is an ultimate semiconductor with exceptional physical and chemical properties, such as an ultra‐wide bandgap, excellent carrier mobility, extreme thermal conductivity, and stability, making it highly desirable for various applications including power electronics, sensors, and optoelectronic devices. However, the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films, which are crucial for realizing the full potential of this wonder material. Heteroepitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties. This review provides an overview of the advancements in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition, including the mechanism of heteroepitaxial growth, selection of substrates, film optimization, chemistry of defects, and doping. Moreover, recent progress on the device applications and perspectives is also discussed.

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Initial growth mechanism of high-quality CVD diamond on Ir/sapphire substrate compared with Ir/MgO substrate

Cited by 4 publications

References 45 publications

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Recent progress on heteroepitaxial growth of single crystal diamond films

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