Initial oxidation of 6H–SiC()- surface studied by ion scattering combined with photoemission induced by synchrotron-radiation-light

Hoshino, Yasushi; Nishimura, Tomoaki; Yoneda, Tomoaki; Ogawa, Kazuhiko; Namba, Hidetoshi; Kido, Yoshiaki

doi:10.1016/s0039-6028(02)01296-7

Cited by 34 publications

(29 citation statements)

References 27 publications

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“…Also, this relative energy agrees with that reported in Ref. 30. In the case of the Si face, only the Si 1+ states were reported to be observed as the compositional transition states.…”

Section: Figsupporting

confidence: 92%

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Hijikata¹,

Yaguchi²,

Yoshida³

et al. 2006

Journal of Applied Physics

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Wet and dry oxide films-4H-SiC epitaxial (0001¯) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results.

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“…Also, this relative energy agrees with that reported in Ref. 30. In the case of the Si face, only the Si 1+ states were reported to be observed as the compositional transition states.…”

Section: Figsupporting

confidence: 92%

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Hijikata¹,

Yaguchi²,

Yoshida³

et al. 2006

Journal of Applied Physics

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show abstract

“…• C [131,132]. At RT early saturation is observed [131,132] with the saturation coverage specified by MEIS at 1.07 ML of oxygen upon exposure to 10 L [131].…”

Section: Etching and Oxidationmentioning

confidence: 66%

“…At RT early saturation is observed [131,132] with the saturation coverage specified by MEIS at 1.07 ML of oxygen upon exposure to 10 L [131]. The oxide regime in the PES Si2p line is dominated by the Si 1+ component, and the Si adatom related surface state disappears [131,132]. This is interpreted such that at RT mainly the adatoms are oxidized and only 10-15% of the oxygen atoms are inserted into Si-C bonds [131].…”

Section: Etching and Oxidationmentioning

confidence: 77%

“…The oxide regime in the PES Si2p line is dominated by the Si 1+ component, and the Si adatom related surface state disappears [131,132]. This is interpreted such that at RT mainly the adatoms are oxidized and only 10-15% of the oxygen atoms are inserted into Si-C bonds [131]. At 500…”

Section: Etching and Oxidationmentioning

confidence: 96%

“…Here, a saturation coverage of 1.8 ML (upon 100 L O 2 ) is determined [131]. At even higher temperatures (800…”

Section: Etching and Oxidationmentioning

confidence: 97%

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Initial oxidation of 6H–SiC()- surface studied by ion scattering combined with photoemission induced by synchrotron-radiation-light

Cited by 34 publications

References 27 publications

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Atomic Structure of SiC Surfaces

Bottom–Up Fabrication of Carbon‐Rich Silicon Carbide Nanowires by Manipulation of Nanometer‐Sized Ethanol Menisci

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