Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Abstract

Interface-formation processes in atomic layer deposition (ALD) of Al2O3 on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al2O3 ALD was carried out by repeating a cycle of Al(CH3)3 (trimethylaluminum, TMA) adsorption and oxidation by H2O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al2O3 bulk-film growth started from the third cycle. These observations indicated that the Al2O3/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.

Heterogeneous CMOS Integration of InGaAs-OI nMOSFETs and Ge pMOSFETs Based on Dual-Gate Oxide Technique

“…self-cleaning effect before oxide deposition in atomic layer deposition (ALD) is preferred [15,16]. Meanwhile, the thermal budget during the fabrication of the S/D terminal with the dopant activation in the well could also introduce severe degradation of the gate stack quality [10].…”

“…However, the integrated fabrication of these two MOSFETs has long been challenging, considering the different fabrication and processing methodology of the gate oxide. For the oxide/semiconductor interface engineering, fabrication procedure of Ge-based pMOSFETs usually utilizes post-oxidation treatment to suppress the interface traps in Ge gate oxide [8], while for InGaAs-based nMOSFETs, the self-cleaning effect before oxide deposition in atomic layer deposition (ALD) is preferred [15,16]. Meanwhile, the thermal budget during the fabrication of the S/D terminal with the dopant activation in the well could also introduce severe degradation of the gate stack quality [10].…”

Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates

“…Typical growth rate was 1 Å/cycle. For the ALD of TiO 2 films, using TiCl 4 +2H 2 O > TiO 2 +4HCl reaction, 175 cycles of TiCl 4 were used for the deposition of 7 nm TiO 2 with a typical growth rate of 0.4 Å/cycle. , Vacuum annealing (VA) was carried out for some sample at 350°C for 5 mins at process pressure of ∼1 × 10 –6 mTorr. The Al metal, deposited by evaporation, was used as the gate electrode (area: 2.5 × 10 –4 cm 2 ).…”

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

“…Before growing passivation films using techniques such as chemical vapor deposition, atomic layer deposition, or organic passivation and surface thiolation, it is often necessary to perform some auxiliary treatment on the semiconductor surface first to remove surface pollutants, impurity ions, and the air oxide layer. The common methods mainly include chemical solvent treatment, plasma cleaning, special gas treatment, and light treatment [ 192 , 193 , 194 , 195 , 196 , 197 , 198 ]. (a) Chemical solvent treatment, chemical solvents treatment commonly used organic solvents are: alcohol, acetone, methanol, trichloroethylene, etc.…”