Initial quantum well states in Ag thin films on the In/Si(111)-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt><mml:mo linebreak="goodbreak">×</mml:mo><mml:msqrt><mml:mn>3</mml:mn></mml:msqrt></mml:mrow></mml:math> surface

Starfelt, Samuel; Johansson, Lars; Zhang, Hanmin

doi:10.1016/j.susc.2019.121531

Cited by 9 publications

(4 citation statements)

References 39 publications

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“…Over the past decades, countless efforts have been invested in generating different types QWSs devices and improving their qualities. The QWSs are generally obtained in thin film structure especially in metallic thin films (such as Bi, , Pb, , Ag, Cu, Fe, etc . ), transition metal dichalcogenides/oxides films such as MoS 2 , and SrVO 3 as well as in thin-film heterostructures (i.e., SrTiO 3 /LaAlO 3 ).…”

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confidence: 99%

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb₂SiTe₄

et al. 2021

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Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb₂SiTe₄

et al. 2021

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“…-Sn приводит к формированию упорядоченных пленок Ag при комнатной температуре, а толщина их при этом может быть менее 5 ML [15][16][17].…”

Section: Introductionunclassified

Диффузия Ag и Pb по поверхности Ge(111)-3x2sqrt(3)sqrtSn

Долбак¹

2023

Физика Твердого Тела

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Ag and Pb diffusion on Ge(111)-3x2sqrt(3)-Sn surface has been studied by Auger electron spectroscopy and low energy electron. The mechanisms of diffusion of atoms of these elements along the Ge(111)-3x2sqrt(3)-Sn surface are determined, and the temperature dependences of the diffusion coefficients are measured. Surface diﬀusion coeﬃcients versus temperature have been measured. The diffusion parameters of Ag along the Ge(111)-3x2sqrt(3)-Sn and Si (111)-2sqrt(3)x2sqrt(3)-Sn surfaces are compared.

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“…-Sn leads to the formation of ordered Ag films at room temperature, and their thickness may be less than 5 ML [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Ag and Pb diffusion on Ge(111)-3x2sqrt(3)sqrtSn surface

2023

Physics of the Solid State

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Ag and Pb diffusion on Ge(111)-3x2sqrt(3)sqrtSn surface has been studied by Auger electron spectroscopy and low energy electron diffraction. The mechanism of diffusion of atoms of these elements along the Ge(111)-3x2sqrt(3)sqrtSn surface is determined, and the temperature dependences of the diffusion coefficients are measured. The diffusion parameters of Ag along the Ge(111)-3x2sqrt(3)sqrtSn and Si(111)-2sqrt(3)sqrtSn surfaces are compared. Keywords: surface, surface diffusion, Ge(111), Ag, Pb, Sn.

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Initial quantum well states in Ag thin films on the In/Si(111)-3×3 surface

Cited by 9 publications

References 39 publications

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb₂SiTe₄

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb₂SiTe₄

Диффузия Ag и Pb по поверхности Ge(111)-3x2sqrt(3)sqrtSn

Ag and Pb diffusion on Ge(111)-3x2sqrt(3)sqrtSn surface

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Initial quantum well states in Ag thin films on the In/Si(111)-3×3 surface

Cited by 9 publications

References 39 publications

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4

Диффузия Ag и Pb по поверхности Ge(111)-3x2sqrt(3)sqrtSn

Ag and Pb diffusion on Ge(111)-3x2sqrt(3)sqrtSn surface

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Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb₂SiTe₄

Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb₂SiTe₄