Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

Buda, B.; Leifeld, O.; Völlmeke, S.; Schmilgus, F.; As, D. J.; Schikora, D.; Lischka, K.

doi:10.12693/aphyspola.90.997

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…Y 0 emission is typically correlated with dislocations and other extended defects in ZnSe, which have been known to be nucleated at Ga 2 Se 3 at the ZnSe/GaAs interface [24,25]. The increase in the Y 0 emission intensity with increasing As-desorption temperature and the use of a Se-PT rather than a Zn-PT can therefore be explained by the higher quantity of Ga 2 Se 3 at the ZnSe/GaAs interface under these conditions.…”

Section: Resultsmentioning

confidence: 99%

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications

Park

Beaton

Steirer

et al. 2017

Applied Surface Science

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We investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2 Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with lowtemperature photoluminescence. However, moderation of Ga-Se bonding through a Se pretreatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in the underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.

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Section: Resultsmentioning

confidence: 99%

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications

Park

Beaton

Steirer

et al. 2017

Applied Surface Science

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show abstract

Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

Zhang

Alberi

Honsberg

et al. 2021

Applied Surface Science

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Cathodoluminescence analysis of cleaved facets of a ZnSe p–n junction

Wang¹,

As²,

Buda³

et al. 2000

Journal of Applied Physics

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ZnSe diodes grown on (100) GaAs substrates by molecular beam epitaxy were investigated using cathodoluminesence (CL) measurements at sample temperatures between 50 and 300 K. The CL line scans at different photon energies were performed on cleaved p–n junctions at 50 and 300 K, respectively. Taking into account surface recombination, carrier generation volume, carrier diffusion and internal built-in electric field and related carrier drift, the CL measurements from cleaved p–n junctions could be qualitatively explained. The charge depletion layer has a strong influence on the CL measurements. The calculated charge depletion width is in good agreement with CL measurements. The experimental data from the spatially resolved CL on the cleaved ZnSe diodes revealed important information of the carrier dynamics and recombination processes in these devices.

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Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs

Cited by 4 publications

References 6 publications

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications

Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

Cathodoluminescence analysis of cleaved facets of a ZnSe p–n junction

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