Initial Stage Growth during Plasma‐Enhanced Atomic Layer Deposition of Cobalt

Lee, Han‐Bo‐Ram; Park, Yong Jun; Baik, Sunggi

doi:10.1002/cvde.201106937

Cited by 21 publications

(14 citation statements)

References 27 publications

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“…As most of the noble metal thin films prepared by ALD undergo incubation for nucleation growth, ,, the growth and electrical characteristics can be influenced by the growth mechanism during the initial stage of growth with the transition regime, the outmost surface changes from the substrate surface to the final saturated and continuous surface of the metal film. , Therefore, we conducted a careful study to understand the growth mechanism of Pt thin films. Figure a shows the variation of Pt thin film thickness (determined by FE-SEM) depending on the ALD cycles.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O₂ Reactant

et al. 2019

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Pt thin films, using the Pt precursor, dimethyl(N,N-dimethyl-3-butene-1-amine-N)platinum (DDAP, C8H19NPt), were deposited by atomic layer deposition (ALD). The growth characteristics of the Pt thin films were systemically investigated. A saturated growth rate was obtained with an increase in precursor and reactant pulse times, revealing the nature of the ALD self-limiting process. The growth rate increased with increasing deposition temperature and finally became saturated above 280 °C, showing a high growth rate of 0.85 Å/cycle. The short incubation time for Pt nucleation promoted the growth characteristics, which can be favorable for catalytic applications. The high reactivity and small adsorbate size produced the relatively high growth rate of the Pt thin films deposited with the DDAP precursor. A very low resistivity, close to the value of bulk Pt, was obtained for all Pt thin films deposited at various temperatures. The low resistivity was due to the similar crystalline structure and very high purity of the Pt thin films at all deposition temperatures explored in this study. In addition, Pt thin films were also deposited on a high-aspect-ratio substrate and showed good uniformity and step coverage, with a constant work function, which can be promising for electrode applications. Synthesis of Pt films by ALD using the DDAP Pt precursor and O2 is a noteworthy approach for obtaining films with a high growth rate and low resistivity.

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Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O₂ Reactant

et al. 2019

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“…22 Since then several groups have adopted the technique into ALD research. [23][24][25][26][27] In order to be useful as an in situ technique, XRR needs to be sensitive to changes in thickness and roughness on the order of Å ngstroms and changes to the density of a few percent. Figure 2 aims to demonstrate the sensitivity of XRR.…”

Section: Scattering Based Techniquesmentioning

confidence: 99%

In situ synchrotron based x-ray techniques as monitoring tools for atomic layer deposition

Devloo-Casier

Ludwig

Detavernier

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic layer deposition (ALD) is a thin film deposition technique that has been studied with a variety of in situ techniques. By exploiting the high photon flux and energy tunability of synchrotron based x-rays, a variety of new in situ techniques become available. X-ray reflectivity, grazing incidence small angle x-ray scattering, x-ray diffraction, x-ray fluorescence, x-ray absorption spectroscopy, and x-ray photoelectron spectroscopy are reviewed as possible in situ techniques during ALD. All these techniques are especially sensitive to changes on the (sub-)nanometer scale, allowing a unique insight into different aspects of the ALD growth mechanisms.

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“…In terms of ALD Co films, a large number of Co precursors, especially the ones based on cyclopentadienyl ligand (Cp), have been widely studied, such as bis-cyclopentadienyl cobalt (CoCp 2 ) [8–14], bis(η-methylcyclopentadienyl) cobalt [Co(MeCp) 2 ] [15], and cyclopentadienyl isopropyl acetamidinato cobalt [Co(CpAMD)] [16]. The employment of CoCp 2 enables the growth of Co films with a low resistivity and high purity; however, the stable film growth is limited to the temperatures beyond 250 °C.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

Zhu

Ding

et al. 2019

Nanoscale Res Lett

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For advanced Cu interconnect technology, Co films have been widely investigated to serve as the liner and seed layer replacement because of a better wettability to Cu than Ta. In this article, the Co films are grown by plasma-enhanced atomic layer deposition using Co(EtCp) 2 as a precursor, and the influences of process parameters on the characteristics of the Co films are elaborately investigated. The results indicate that the process window is 125–225 °C with a growth rate of ~ 0.073 Å/cycle. That is to say, the connection of Et group to Cp ligand can enable a stable film growth at 125 °C, while the corresponding temperature must be higher than 200 °C in terms of Co(Cp) 2 and Co(MeCp) 2 . The deposited films contain N and O elements besides dominant Co and C. Furthermore, the prolongation of the NH 3 pulse time significantly enhances the conductivity of the Co film and a low resistivity of 117 μΩ cm can be achieved with a NH 3 pulse time of 40 s. The root mean square roughness shows a smaller variation with the deposition temperature and maintains a low value of ~ 0.3 nm, indicative of a flat Co film.

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Initial Stage Growth during Plasma‐Enhanced Atomic Layer Deposition of Cobalt

Cited by 21 publications

References 27 publications

Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O₂ Reactant

Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O₂ Reactant

In situ synchrotron based x-ray techniques as monitoring tools for atomic layer deposition

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

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Initial Stage Growth during Plasma‐Enhanced Atomic Layer Deposition of Cobalt

Cited by 21 publications

References 27 publications

Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O2 Reactant

Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O2 Reactant

In situ synchrotron based x-ray techniques as monitoring tools for atomic layer deposition

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor

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Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O₂ Reactant

Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O₂ Reactant