“…Another is that the Si(111)-(7 × 7) surface has a large unit cell (∼2.7 nm), which consists of a faulted half unit cell (FHUC) and an unfaulted half unit cell (UHUC) . These half unit cells (HUCs) form identical atom traps for Ag atoms, leading to the formation of Ag clusters. ,,, Previous experimental and theoretical works have shown the growth behavior of Ag on a Si(111)-(7 × 7) surface in terms of the occupancy and occupancy preference between FHUC and UHUC. , The adsorption and diffusion of a single Ag atom, − the adsorption site of two Ag atoms, and the rectification behavior of a three Ag atom cluster on Si(111)-(7 × 7) have also been well studied, uncovering rich physics in this system. These results further inspire our interest in Ag nanostructures with more atoms.…”