1994
DOI: 10.1103/physrevb.49.7535
|View full text |Cite
|
Sign up to set email alerts
|

Initial stages of epitaxialCoSi2formation on Si(100) surfaces

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

1
17
0

Year Published

1995
1995
2009
2009

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 52 publications
(18 citation statements)
references
References 27 publications
1
17
0
Order By: Relevance
“…As understood from the growth of Co on Si(100) at room temperature, diffused-in Co atoms occupying the tetrahedral interstitial sites are the main cause for the weakening of Si-Si bonds [9][10][11][12][13][14][15][16]. These weakened bonds allow Si atoms to diffuse out to the surface and form silicide-like phases.…”
Section: Introductionmentioning
confidence: 99%
“…As understood from the growth of Co on Si(100) at room temperature, diffused-in Co atoms occupying the tetrahedral interstitial sites are the main cause for the weakening of Si-Si bonds [9][10][11][12][13][14][15][16]. These weakened bonds allow Si atoms to diffuse out to the surface and form silicide-like phases.…”
Section: Introductionmentioning
confidence: 99%
“…This eventually leads to the formation of metallic Co film on top, similar to the growth of Co on clean Si(1 1 1) surface as described above. These layers also appear to lack long range order and hence the LEED pattern of the clean surface is replaced by a diffuse background as Co coverage exceeds 2.5 ML [14].…”
Section: Introductionmentioning
confidence: 96%
“…In this respect, the interface between Co and Si has been the focus of the research due to its lower resistivity, small lattice mismatch with silicon, sharp interface (ideal for making schottky barrier) and high temperature stability. Cobalt silicide is used mainly in electronic devices as a contact material [4][5][6]. However, the interaction of Co with Si is not fully understood and controversies exist about the nature of Co/Si system.…”
Section: Introductionmentioning
confidence: 99%