Initial stages of GaP heteroepitaxy on nanoscopically roughened (001)Si

Abstract

GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure J. Appl. Phys. 111, 083534 (2012); 10.1063/1.4706573Thickness inhomogeneities and growth mechanisms of GaP heteroepitaxy by organometallic chemical vapor deposition J.The authors report real-time spectroscopic-polarimetric determinations of the initial phase of GaP heteroepitaxy by organometallic chemical vapor deposition on nanoscopically roughened ͑NR͒ ͑001͒Si substrates, where polarimetry measurements are also used to quantify roughness. The authors compare the results with analogous data for GaP homoepitaxy and the initial phase of GaP heteroepitaxy on ͑001͒GaAs. The large density of nucleation sites on NRSi significantly improves film continuity relative to nonroughened vicinal ͑001͒Si substrates, but conditions that are typically used to grow GaP on ͑001͒III-V surfaces generate metallic Ga, indicating that NRSi is more efficient at decomposing trimethylgallium than either GaP or GaAs.

Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si

“…Recently, we reported successful growth of epitaxial GaP layers on Si substrate using MOVPE [10]. Liu et al [14] reported on the initial growth mechanism using in-situ measurements. Here, we report a two-step growth process of GaP epilayer on Si substrate using MOVPE, which includes the growth of a low-temperature GaP nucleating layer and a high-temperature GaP epilayer.…”

“…To explore these issues, a number of groups have investigated the growth of GaP layers on Si substrates using metal organic vapor-phase epitaxy (MOVPE) [1,[8][9][10][11][12], molecular beam epitaxy (MBE) [5] and chemical beam epitaxy [13]. The MOVPE growth of high crystalline quality GaP on Si is still a challenging task [10,14]. Recently, we reported successful growth of epitaxial GaP layers on Si substrate using MOVPE [10].…”

Investigation of heteroepitaxy on nanoscopically roughened (001)Si by real‐time spectroscopic polarimetry

“…The initial metallic gallium concentration is reduced, but not eliminated. For comparison, the initial growth rate of GaP on (001)GaAs under these conditions is one order of magnitude smaller and no metallic Ga is present [8]. The significant differences in chemical reactivities among nr(001)Si, (001)GaAs and (001)GaP also show that growth under present conditions is kinetically limited.…”

“…Here, we investigate growth of GaP on nanoscopically roughened (nr-) (001)Si in an organometallic chemical vapor deposition (OMCVD) reactor, providing additional results and a possible alternative interpretation that complement our earlier publication on this topic [8]. With a lattice mismatch of only 0.37%, GaP on Si is a good test case.…”

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

“…Low temperature nucleation is beneficial to reduce interface roughening, which was observed, e.g., by in situ ellipsometry for nucleation at 600 °C. Detailed in situ studies—combining RAS, p‐polarized reflectance spectroscopy, and laser light scattering during pulsed GaP nucleation by chemical beam epitaxy as well as polarometry in MOVPE—revealed that TBP reacts immediately upon adsorption on the growth surface, and that the amount of Ga must be precisely balanced to minimize surface roughening, 3D nucleation, and Ga droplet formation . 3D nucleation is also reduced when applying high V:III ratios .…”