2004
DOI: 10.1002/pssc.200304323
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Initial stages of porous silicon formation: An in‐situ investigation of the electronic properties and surface morphology

Abstract: In-situ photovoltage (PV) and photoluminescence (PL) are used to obtain information about the band bending of Si and the PL quenching by nonradiative (nr) surface recombination during the beginning of electrochemical etching of silicon in aqueous fluoride solutions. The onset of the porous silicon formation in diluted NH 4 F solution is accompanied by an increase of nr surface recombination, by a development of positive charged surface states and by a strong increase of the current density. The evolution of hy… Show more

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