Transition‐metal (TM) doped zinc oxide (ZnO) films were grown by a developed plasma‐enhanced chemical vapor deposition (PECVD) technique combined with RF sputtering. In the developed system, TMs such as Fe, Cr and Ni were doped into the ZnO films by RF sputtering with a stainless‐steel electrode connected to a RF generator. X‐ray diffraction (XRD) measurements revealed that the TM‐doped ZnO films were successfully grown with c‐axis orientation at 400 °C with RF power of 25 W. The doped TMs were segregated to the surface when the films were annealed at 700 °C in O2 ambient. After higher‐temperature annealing at 800 °C, ZnO nanostructures with wire and tube shapes were formed by a catalytic influence of the segregated TMs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)