Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

Choi, Sungho; Jhang, Kyung-Young

doi:10.1063/1.4885385

Cited by 8 publications

(3 citation statements)

References 33 publications

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“…Anisotropy within Si (100) plane also causes the maximum von Mises peak stress to be 20% higher when serpentines are strain loaded in the <110> direction of Si compared to those fabricated parallel to the <100> direction. The stresses are nearly the same between the <110> (100) and <110> (111) most likely because the stiff <110> direction is the cleavage direction for Si . These 3D FEA results suggest serpentines patterned and stretched on the Si (100) plane along the <100> direction can reach larger global strains than Si (100) <110> and (111) serpentines.…”

Section: Resultsmentioning

confidence: 74%

Structural Anisotropy in Stretchable Silicon

Curtis

Tompkins

Nichols

et al. 2019

Adv Elect Materials

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Patterned planar silicon (Si) semiconductor structures able to conform around 3D surfaces are promising candidates for wearable devices from solar cells to displays. Despite the known anisotropic material properties of crystalline semiconductors, prior evaluations have assumed isotropic stretchable mechanical behavior. The effect of structural anisotropy on the mechanical stretching behavior of {100} single crystalline Si planes is demonstrated through models and experiments. 3D finite element analysis results show serpentines fabricated and strained loaded on the dense {111} family of planes will have maximum von Mises peak stresses that are 20% higher than those fabricated in the <100> direction on the {100} family of planes. A fabrication process is presented to release in‐plane Si serpentine test structures from (100) silicon‐on‐insulator wafers aligned parallel to the <110> and <100> crystallographic orientations. The released test structures can accommodate strains to 84%. Raman spectroscopy is used to characterize anisotropic effects on the internal stresses of Si serpentines. Raman measurements confirm two different maximum stress locations on <110> and <100> Si serpentines, resulting in two different break locations. All results show anisotropy plays a critical role in the mechanical behavior of stretchable Si serpentines and must be considered during design of stretchable semiconductor structures.

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Section: Resultsmentioning

confidence: 74%

Structural Anisotropy in Stretchable Silicon

Curtis

Tompkins

Nichols

et al. 2019

Adv Elect Materials

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“…Slip planes remain {111} in the study of laser-induced slip damage. [14,16,17] Therefore, researches on slipping put particular emphasis on {111}⟨110⟩ slip systems.…”

Section: Introductionmentioning

confidence: 99%

Slip on the surface of silicon wafers under laser irradiation: Scale effect

Jia¹,

Li²,

Zhou³

et al. 2017

Chinese Phys. B

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The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally, {110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip. The scale effect was shown to be an intrinsic property of silicon.

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“…The crack distribution was also investigated [10] . Choi et al built a more complex three-dimensional model and took the crystal structure into account [11] . Their analyses are all based on the final damage morphology, which is observed after the experiment, and are not comprehensive due to the neglected dynamic ablation process.…”

mentioning

confidence: 99%

Stress damage process of silicon wafer under millisecond laser irradiation

Jia¹,

Zhang²,

Zhu³

et al. 2018

Chin. Opt. Lett.

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The stress damage process of a single crystal silicon wafer under millisecond laser irradiation is studied by experiments and numerical simulations. The formation process of low-quality surface is monitored in real-time. Stress damage can be observed both in laser-on and -off periods. Plastic deformation is responsible for the first stress damage in the laser-on period. The second stress damage in the laser-off period is a combination of plastic deformation and fracture, where the fundamental cause lies in the residual molten silicon in the ablation hole.

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Initiation time of near-infrared laser-induced slip on the surface of silicon wafers

Cited by 8 publications

References 33 publications

Structural Anisotropy in Stretchable Silicon

Structural Anisotropy in Stretchable Silicon

Slip on the surface of silicon wafers under laser irradiation: Scale effect

Stress damage process of silicon wafer under millisecond laser irradiation

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