Injection intensity-dependent recombination at various grain boundary types in multicrystalline silicon solar cells

Frühauf, Felix; Altermatt, P.P.; Luka, Tabea; Mehl, Torbjørn; Deniz, Hakan; Breitenstein, O.

doi:10.1016/j.solmat.2018.02.029

Cited by 1 publication

(1 citation statement)

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“…To resolve the different emission signals that contribute to the defect luminescence, a multivariate curve resolution analysis (MCR) 52,53 was carried out. Despite the relatively strong D3 and D4 emission at 88 K, only the D1 and D2 (weak) peaks are detected at temperatures above 150 K (see Figure A4).…”

Section: Resultsmentioning

confidence: 99%

Temperature sensitivity maps of silicon wafers from photoluminescence imaging: The effect of gettering and hydrogenation

Nie¹,

Chin²,

Soufiani³

et al. 2022

Progress in Photovoltaics

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The operating temperature has a critical impact on the electrical performance of solar cells. It has been shown that the temperature coefficient is not uniform across devices and often varies between different regions due to the inhomogeneous distributions of defects. In this study, temperature‐dependent photoluminescence imaging measurements are used to assess the influence of different processes such as gettering, firing and advanced hydrogenation on the temperature‐dependent electrical performance of cast‐mono silicon wafers. It is found that the height of the wafer within the ingot impacts the response of the temperature coefficient to different fabrication processes. Advanced hydrogenation is found to reduce the temperature sensitivity, more than expected solely from the improvement in implied open‐circuit voltage. Crystallographic defects are found to be the least temperature sensitive regions, indicating that their detrimental impact is reduced at higher operating temperatures. The interesting low temperature sensitivity in the defective regions is further investigated using hyperspectral photoluminescence imaging measurements and atom probe tomography. It is suggested that the reduced sensitivity is due to impurities decorating crystallographic defects.

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Section: Resultsmentioning

confidence: 99%