Injection-Locked CMOS Frequency Doublers for $\mu$-Wave and mm-Wave Applications

Monaco, Enrico; Pozzoni, M.; Svelto, F.; Mazzanti, Andrea

doi:10.1109/jssc.2010.2049780

Cited by 66 publications

(20 citation statements)

References 39 publications

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“…This conclusion is for GFETs exploiting the inherent electronhole symmetry present in graphene. It does not preclude the possibility of higher conversion efficiency for GFETs operating in a more conventional transistor mode where frequency multiplication can arise from general input or output non-linearities, 18,19 which is beyond the scope of the current work.…”

mentioning

confidence: 99%

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Parrish

Akinwande

2011

Applied Physics Letters

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mentioning

confidence: 99%

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Parrish

Akinwande

2011

Applied Physics Letters

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“…But, the output signal of the frequency doubler is one phase. In paper [7], the double frequency VCO is including one differential VCO and one push-push frequency doubler. But, the output signal of the push-push frequency doubler is one phase.…”

Section: Circuit Designmentioning

confidence: 99%

“…And the output signal of the push-push frequency doubler is differential. In paper [5,6,7,9], the VCO and the frequency doubler are independent, the doubler circuit consumes additional power. And an additional phase shift or phase splitter is necessary for the wireless transceiver.…”

Section: Circuit Designmentioning

confidence: 99%

Dual-band voltage controlled oscillator with optimized Gm

Huang

Chen

Hung

2015

IEICE Electron. Express

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A differential VCO with differential push-push frequency doubler for dual-band application is proposed. The dual-band VCO (DB-VCO) adopts the tunable −Gm to optimize the wide tuning start-up condition. The proposed DB-VCO was implemented in 180-nm CMOS process. The DB-VCO provides a fundamental center frequency at 4.476 GHz and a double frequency at 8.985 GHz. A tuning range of fundamental frequency is 1.125 GHz (3.928 GHz-5.053 GHz), and a tuning range of the double frequency is 2.257 GHz (7.856 GHz-10.113 GHz) with maximum control voltage of 1.0 V can be achieved. The phase noise is −96.0 dBc/Hz at 1 MHz offset from center of the DB-VCO fundamental frequency. And the phase noise is −86.4 dBc/Hz at 1 MHz offset from center of the DB-VCO double frequency. The power dissipation of the DB-VCO core is 6.6 mW through 1.0 V supply voltage. The active area is 0.09 mm 2 .

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“…These frequency multipliers can operate at up to millimeter-wave frequencies but require large input signal and exhibit poor harmonic suppression. In recent years, injectionlocked oscillators are increasingly used as frequency multipliers because of their high operation frequency, good phase noise and low power consumption [3]- [6].…”

Section: Introductionmentioning

confidence: 99%

“…Typically several harmonic frequencies are generated by a nonlinear circuit, and then the desired harmonic is selected by the injection-locking oscillator [3]- [6]. Because of the bandpass characteristic of the LC tank, these ILFMs can achieve low phase noise and good suppression of undesired harmonics.…”

Section: Introductionmentioning

confidence: 99%

A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

Çiftçioğlu

2013

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference

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This paper presents a new injection-locked frequency multiplier (ILFM) designed to achieve wide locking range and low power dissipation. The ILFM is constructed using an injection-locked ring oscillator (ILRO) without any inductors. It is injection-locked at each ILRO stage by an injection signal, which is generated by the harmonic generation integrated in each stage from the input signal, with a progressive phase shift. The multiphase injection locking scheme and built-in harmonic generation improve the injection efficiency, increase the locking range, and reduce the power consumption. A multiply-by-2 ILFM prototype is implemented on a test chip using 130-nm CMOS. The measured locking range is 116% (4-15 GHz) with 0.3-V input amplitude. The ILFM prototype consumes 8 mW at 1.8 V, and occupies a chip area less than 0.01 mm 2 .

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Injection-Locked CMOS Frequency Doublers for $\mu$-Wave and mm-Wave Applications

Cited by 66 publications

References 39 publications

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Dual-band voltage controlled oscillator with optimized Gm

A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

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Injection-Locked CMOS Frequency Doublers for $\mu$-Wave and mm-Wave Applications

Cited by 66 publications

References 39 publications

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

Dual-band voltage controlled oscillator with optimized Gm

A 4&#x2013;15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation

Contact Info

Product

Resources

About

A 4–15-GHz ring oscillator based injection-locked frequency multiplier with built-in harmonic generation