INJECTION LUMINESCENCE IN AMORPHOUS SILICON p⁺-i-n⁺JUNCTIONS

Abstract

We present a detailed study of electroluminescence (EL) spectra and + + EL quantum efficiency in well characterised a-Si p -i a junctions under forward bias. The PL characteristics of the i region were probed using laser excitation.Some factors controlling EL efficiency are discussed. EL and PL recombination models are compared and discussed.