Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Jewel, Mohi Uddin; Monne, Mahmuda Akter; Mishra, Bhagyashree Priyadarshini; Chen, Maggie Yihong

doi:10.3390/molecules25051081

Cited by 19 publications

(16 citation statements)

References 26 publications

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“…It is also a non-contact printing technique which does not require any template preparation. The wide application of printed electronics includes organic photodiodes, photovoltaic cells, high-frequency micro-electro-mechanical-switches (MEMS), electronic paper displays, foldable thermochromic displays, and high-performance organic thin-film transistors [ 7 , 24 , 25 , 26 , 27 ]. Last but not least, recent advances in the printed and flexible electronics arena open a whole new realm, widening its application by printing sensors for analysis of ionic concentration, as well as for use in diagnostics applications [ 28 ].…”

Section: Introductionmentioning

confidence: 99%

Inkjet-Printed Graphene-Based 1 × 2 Phased Array Antenna

et al. 2020

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Low-cost and conformal phased array antennas (PAAs) on flexible substrates are of particular interest in many applications. The major deterrents to developing flexible PAA systems are the difficulty in integrating antenna and electronics circuits on the flexible surface, as well as the bendability and oxidation rate of radiating elements and electronics circuits. In this research, graphene ink was developed from graphene flakes and used to inkjet print the radiating element and the active channel of field effect transistors (FETs). Bending and oxidation tests were carried out to validate the application of printed flexible graphene thin films in flexible electronics. An inkjet-printed graphene-based 1 × 2 element phased array antenna was designed and fabricated. Graphene-based field effect transistors were used as switches in the true-time delay line of the phased array antenna. The graphene phased array antenna was 100% inkjet printed on top of a 5 mil flexible Kapton® substrate, at room temperature. Four possible azimuth steering angles were designed for −26.7°, 0°, 13°, and 42.4°. Measured far-field patterns show good agreement with simulation results.

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Section: Introductionmentioning

confidence: 99%

Inkjet-Printed Graphene-Based 1 × 2 Phased Array Antenna

et al. 2020

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“…The AFM image of the printed continuous MoS 2 film (Figure 4d) shows a thickness of 1.4-3.0 nm, matching the results from the HRTEM analyses, much thinner than the values reported in the previous printed thin films shown in Figure 4e. [15,16,18,19,24,[48][49][50][51][52][53][54][55] The broad area of plane-to-plane vdW contacts at the material interface is believed to ensure optimized charge transport across the nanosheets to realize superior electrical performance in thin-film electronics. [56] The I sd -V sd output curves (where I sd is the source-drain current and V sd is the source-drain bias, Figure 4f) and I sd -V g transfer curves (where V g is the gate voltage, Figure 4g Information.…”

Section: Printed Transistors Using Hyperdispersed 2d Semiconductormentioning

confidence: 99%

“…Atomically thin 2D semiconductors [7][8][9][10][11][12][13][14] have emerged as potential ink materials for solution-processable van der Waals (vdW) thin films with few interfacial traps, ideally suited for highperformance and ultrathin printed electronics. However, currently printed 2D semiconductor devices are still limited by their unsatisfactory electronic properties, thick semiconductor layers, and large pattern dimensions (millimeter scale), [4,[15][16][17][18][19] primarily due to the difficulty of highprecision printing of ultrathin continuous patterns with low void ratios, especially single-layer or double-layer continuous and uniformly flat stacking, and lowquality nanosheets with a rather broad thickness distribution and interfacial impurities/trapping states between grain boundaries, [15][16][17][19][20][21][22] thus making it difficult to achieve highly compact thin films with optimum vdW interfaces essential for excellent electron transport and ultrathin structures. Additionally, most 2D material inks use highboiling-point solvents, such as N,N-dimethylformamide (DMF) and N-methyl-2-pyrrolidone (NMP), assisted by additional surfactants.…”

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confidence: 99%

Interface Capture Effect Printing Atomic‐Thick 2D Semiconductor Thin Films

Lin

et al. 2022

Advanced Materials

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The performance of printed electronics is largely dictated by the nature of the ink materials and the printing process. Atomically thin 2D semiconductors [7][8][9][10][11][12][13][14] have emerged as potential ink materials for solution-processable van der Waals (vdW) thin films with few interfacial traps, ideally suited for highperformance and ultrathin printed electronics. However, currently printed 2D semiconductor devices are still limited by their unsatisfactory electronic properties, thick semiconductor layers, and large pattern dimensions (millimeter scale), [4,[15][16][17][18][19] primarily due to the difficulty of highprecision printing of ultrathin continuous patterns with low void ratios, especially single-layer or double-layer continuous and uniformly flat stacking, and lowquality nanosheets with a rather broad thickness distribution and interfacial impurities/trapping states between grain boundaries, [15][16][17][19][20][21][22] thus making it difficult to achieve highly compact thin films with optimum vdW interfaces essential for excellent electron transport and ultrathin structures. Additionally, most 2D material inks use highboiling-point solvents, such as N,N-dimethylformamide (DMF) and N-methyl-2-pyrrolidone (NMP), assisted by additional surfactants. [23] In contrast, 2D materials have lower boiling points and toxicity in alternative solvents without additional surfactants, such as water, acetone, isopropyl alcohol (IPA), and ethanol, often making it difficult to achieve robust and uniform 2D semiconductor crystals offer the opportunity to further extend Moore's law to the atomic scale. For practical and low-cost electronic applications, directly printing devices on substrates is advantageous compared to conventional microfabrication techniques that utilize expensive photolithography, etching, and vacuum-metallization processes. However, the currently printed 2D transistors are plagued by unsatisfactory electrical performance, thick semiconductor layers, and low device density. Herein, a facile and scalable 2D semiconductor printing strategy is demonstrated utilizing the interface capture effect and hyperdispersed 2D nanosheet ink to fabricate high-quality and atomic-thick semiconductor thin-film arrays without additional surfactants. Printed robust thin-film transistors using 2D semiconductors (e.g., MoS 2 ) and 2D conductive electrodes (e.g., graphene) exhibit high electrical performance, including a carrier mobility of up to 6.7 cm 2 V −1 s −1 and an on/off ratio of 2 × 10 6 at 25 °C. As a proof of concept, 2D transistors are printed with a density of ≈47 000 devices per square centimeter. In addition, this method can be applied to many other 2D materials, such as NbSe 2 , Bi 2 Se 3 , and black phosphorus, for printing diverse high-quality thin films. Thus, the strategy of printable 2D thin-film transistors provides a scalable pathway for the facile manufacturing of high-performance electronics at an affordable cost.

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“…Recent studies have shown significant improvements in graphene properties by doping it with different heteroatoms such as Florine (F), Oxygen (O) [ 15 ], Nitrogen (N) [ 16 ], and Boron (B) [ 17 ]. The boron-doped graphene oxide has been reported in various applications such as supercapacitor [ 18 ], Li-ion batteries [ 19 ], solar cells [ 20 ], and the enhanced photogenerated catalysis [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Boron-Doped Reduced Graphene Oxide with Tunable Bandgap and Enhanced Surface Plasmon Resonance

et al. 2020

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Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.

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Inkjet-Printed Molybdenum Disulfide and Nitrogen-Doped Graphene Active Layer High On/Off Ratio Transistors

Cited by 19 publications

References 26 publications

Inkjet-Printed Graphene-Based 1 × 2 Phased Array Antenna

Inkjet-Printed Graphene-Based 1 × 2 Phased Array Antenna

Interface Capture Effect Printing Atomic‐Thick 2D Semiconductor Thin Films

Boron-Doped Reduced Graphene Oxide with Tunable Bandgap and Enhanced Surface Plasmon Resonance

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