Inkjet printing of oxide thin film transistor arrays with small spacing with polymer-doped metal nitrate aqueous ink

Wu, Shaojing; Zhang, Qing; Chen, Zheng; Mo, Lixin; Shao, Shuangshuang; Cui, Zheng

doi:10.1039/c7tc01303e

Cited by 39 publications

(42 citation statements)

References 45 publications

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“…The corresponding threshold voltage and SS are 0.6 V/228 mV dec −1 , 0.85 V/80 mV dec −1 , and 1.2 V/108 mV dec −1 , respectively. [18] Overall, it is clear that the electrical proper ties of printed metal oxide TFTs depend on their composition. [70,71] To understand the mechanism of the performance variations induced by the different types of metal oxide ink, the morphology and chemical composition of printed metal oxide thin films were characterized by atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS).…”

Section: Resultsmentioning

confidence: 99%

“…[18,68] The metal oxide lines were first placed directly on a preheated hotplate and heated for 15 min at 275 °C (for IGZO or IZO lines) or 250 °C (for IO lines). All dielectric layers except the 100 nm SiO 2 were deposited on n-doped Si wafer at 250 °C by atomic layer deposition (ALD).…”

Section: Methodsmentioning

confidence: 99%

“…A few studies have studied the fabrication of TFTs by combining n-type metal oxides and p-type SWCNTs; however, their performance is still not satisfied with relatively low voltage gains and small noise margins at operation voltages less than 2 V. The key reason is that the performance characteristics of printed p-type and n-type transistors, i.e., mobility, sub-threshold swing (SS), threshold voltage, and operation voltage, usually do not match well. [18,63] The on/off ratios of printed metal oxide TFTs are usually independent of V ds due to their large band gaps (>3.0 eV). [60][61][62] Due to their small band gaps (≈0.5 eV), on/off ratios of these SWCNT TFTs decrease significantly with the increase of the source-drain voltage.…”

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confidence: 99%

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High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Luo

Xie²,

Wei

et al. 2019

Adv Elect Materials

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Inkjet printing is a promising technique to fabricate thin-film transistors (TFTs) and integrated complementary metal-oxidesemiconductor (CMOS) circuits because of its patterned Complementary metal-oxide-semiconductor (CMOS) inverters with low power consumption and high noise immunity are essential for realizing practical applications of printed logic gates and circuits. However, the performance of existing printed CMOS inverters is still unsatisfactory because p-type and n-type transistors do not match well. This work demonstrates novel low-voltage and high-performance CMOS inverters using partially printed thin-film transistors (TFTs) on 50 nm HfO 2 /Si substrates based on n-type indium zinc oxides (IZOs) and p-type chirality enriched (9,8) semiconducting single-walled carbon nanotubes (SWCNTs). The high-k dielectric materials grown using atomic layer deposition and (9,8) SWCNTs with relatively large band gaps help to match the characteristics of p-type and n-type transistors-the IZO and SWCNT TFTs exhibit similar mobility on/off ratio, small hysteresis, and low sub-threshold swing at low operating voltages. The hybrid CMOS inverters demonstrate excellent performance with the highest voltage gain up to 45, the largest noise margin of 83% at 1/2 V dd , and the lowest static power consumption of 0.4 µW at V dd of 2 V among recently reported printed CMOS inverters under relatively low annealing temperatures (300 °C). The strategies demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates and circuits. Printable ElectronicsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Luo

Xie²,

Wei

et al. 2019

Adv Elect Materials

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“…In contrary, MO-TFTs fabricated by solution-based techniques are more attractive for their low fabrication costs and high throughput [1][2][3][4]. Among all of the solution-based techniques, inkjet printing, as the state-of-the-art drop-on-demand technique, is widely used in a variety of materials such as organic compounds, graphene, carbon nanotubes and oxides [5][6][7][8] and is particularly attracted in MO-TFT fabrication for its low material waste and high efficiency [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Chen

Lin

et al. 2020

Coatings

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Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

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“…[14][15][16][17] Also, self-assembled monolayer (SAM)based selective surface modification can be used to self-pattern the AOS films, [18][19][20][21] by utilizing the different wetting behaviors of metal-oxide precursor solution on hydrophilic and hydrophobic surfaces. For example, inkjet printing can be used to directly pattern the AOS film and eliminate the sophisticated photolithography and etching processes.…”

mentioning

confidence: 99%

Solution‐Free UV‐Based Direct Surface Modification of Oxide Films for Self‐Patterned Metal‐Oxide Thin‐Film Transistors

Lee

Choi

Park

et al. 2019

Adv Elect Materials

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process steps. For example, inkjet printing can be used to directly pattern the AOS film and eliminate the sophisticated photolithography and etching processes. [14][15][16][17] Also, self-assembled monolayer (SAM)based selective surface modification can be used to self-pattern the AOS films, [18][19][20][21] by utilizing the different wetting behaviors of metal-oxide precursor solution on hydrophilic and hydrophobic surfaces. In addition, a lyophobic polymer such as CYTOP can be also used to self-pattern an AOS film, similar to that applied for solution-processed organic semiconductors. [22] Although the SAM-or CYTOP-based methods are effective in self-patterning the AOS or organic semiconductor films, their sophisticated procedures and wet chemistry may hinder their widespread use in mass production. Therefore, the development of a simple, wet process free, and environmentally safe method for self-patterning solution-processed AOS films is still demanded. In this perspective, we speculate that a direct surface modification using ultraviolet (UV) light can be a good candidate for selfpatterning the solution-processed AOS films, since no chemicals or wet processes are used in the process. Previously, it was demonstrated that a selective exposure of UV light on polydimethylsiloxane or SU-8 photoresist could generate regions with a high surface-energy difference, [23,24] enabling local wetting and dewetting of solution-processed thin films. A similar behavior was also observed in oxide films such as ZnO and TiO 2 , in which the surface state was changed from hydrophobic to hydrophilic state by a simple UV light irradiation, as a result of the surface defect formation. [25] Thus, it is reasonable to expect that such direct modification of surface energy can be extended to other oxide films such as SiO 2 , allowing the selfpatterning of solution-processed AOS films.Here, we demonstrated a simple and solution-free direct surface modification of SiO 2 gate dielectric film using UV light irradiation and its implementation on fabricating self-patterned oxide TFTs. More specifically, by selective irradiating UV light on a SiO 2 film through a metal shadow mask, regions with different surface energies could be formed on the SiO 2 gate dielectric, enabling the self-patterning of solution-processed indium-gallium-zinc oxide (IGZO) films. With optimized surface modification process and channel pattern design, selfpatterned IGZO TFTs with sufficiently low off-state current (<10 −12 A), high current on/off ratio (≈10 8 ), and reasonable field-effect mobility were fabricated.In thin-film device fabrication, particularly using a solution process, selfpatterning is effective in reducing the fabrication steps by eliminating the conventional photolithography process. Here, solution-free ultraviolet (UV)-based direct surface modification is introduced for self-patterning of solution-processed oxide semiconductors. The direct surface modification is carried out by selectively irradiating UV light on a SiO 2 film, creating regions with...

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Inkjet printing of oxide thin film transistor arrays with small spacing with polymer-doped metal nitrate aqueous ink

Abstract: Minimizing the spacing of inkjet printed oxide arrays for thin film transistors via combination of polyvinylpyrrolidone (PVP) doping in ink and HMDS treatment of substrates.

Cited by 39 publications

References 45 publications

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Solution‐Free UV‐Based Direct Surface Modification of Oxide Films for Self‐Patterned Metal‐Oxide Thin‐Film Transistors

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