Inkjet printing of phosphorus dopant sources for doping poly-silicon in solar cells with passivating contacts

Kiaee, Zohreh; Reichel, Christian; Hussain, Zulkifl; Nazarzadeh, Milad; Huyeng, Jonas D.; Clement, Florian; Hermle, Martin; Keding, Roman

doi:10.1016/j.solmat.2020.110926

Cited by 16 publications

(18 citation statements)

References 38 publications

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“…37 Also, the dopant-containing liquids can be applied on patterned regions easily without shadow masks through printing technologies. 38,39 Besides, the solutions can convey diverse dopant species of different concentrations at the same time, which enhances the versatility of the doping processes.…”

Section: Introductionmentioning

confidence: 99%

“…First, dopant-containing solutions are less toxic, hence reducing extra safety measures often seen in the gas diffusion or ion implantation processes . Also, the dopant-containing liquids can be applied on patterned regions easily without shadow masks through printing technologies. , Besides, the solutions can convey diverse dopant species of different concentrations at the same time, which enhances the versatility of the doping processes.…”

Section: Introductionmentioning

confidence: 99%

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Boron Spin-On Doping for Poly-Si/SiO_x Passivating Contacts

Ding

Truong

Nguyen

et al. 2021

ACS Appl. Energy Mater.

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Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiO x /n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, drive-in dwell time, and intrinsic poly-Si thickness on the boron-doped poly-Si passivating contacts are investigated. First, the contact passivation quality improves with an increasing thermal budget (<950 °C) but then decreases again for excessive thermal annealing (>950 °C). Second, the thickness of the intrinsic poly-Si film shows only a little impact on the performance. After a hydrogenation treatment by depositing an AlO x /SiN x stack and subsequent annealing in forming gas, the optimized poly-Si passivating contacts show an implied open-circuit voltage (iV oc ) > 720 mV, together with a contact resistivity (ρ c ) below 5 mΩ cm 2 . These results demonstrate that boron spin-on doping is a promising alternative to the conventional BBr 3 thermal diffusion for the fabrication of p-type poly-Si passivating contacts.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Boron Spin-On Doping for Poly-Si/SiO_x Passivating Contacts

Ding

Truong

Nguyen

et al. 2021

ACS Appl. Energy Mater.

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“…The electron or hole selectivity of poly-Si passivating contact is determined by the employed doping elements, for example, phosphorus and boron doping form electron- and hole-selective contacts, respectively. Phosphorus and boron doping can be implemented in situ during silicon layer deposition by either PECVD or LPCVD, using a doping gas of phosphine (PH 3 ) or diborane (B 2 H 6 ). ,− An alternative method is to introduce the dopant ex situ by an extra step after intrinsic silicon layer deposition, for example, using ion implantation, ,,, thermal diffusion, ,, or polymer-based dopant inks …”

Section: Introductionmentioning

confidence: 99%

“…8,16−18 An alternative method is to introduce the dopant ex situ by an extra step after intrinsic silicon layer deposition, for example, using ion implantation, 6,9,11,15 thermal diffusion, 13,14,19 or polymer-based dopant inks. 20 The PH 3 and B 2 H 6 gases for in situ doping and thermal diffusion are toxic and expensive, which requires mandatory safety control and careful handling for health-and safetyrelated concerns. In addition, masking or/and single-sided etching process is often inevitable when applying the gasdoped poly-Si passivating contacts on c-Si solar cells.…”

Section: ■ Introductionmentioning

confidence: 99%

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Yang

Kang

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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In this work, we present a simple and efficient solution-doping process for preparing high-quality polycrystalline silicon (poly-Si)-based passivating contacts. Commercial phosphorus or boron-doping solutions are spin-coated on crystalline silicon (c-Si) wafers that feature SiO2/poly-Si layers; the doping process is then activated by thermal annealing at high temperatures in a nitrogen atmosphere. With optimized n- and p-type solution doping and thermal annealing, n- and p-type poly-Si passivating contacts featuring simultaneously a low contact recombination parameter (J 0c) of 2.4 and 12 fA/cm2 and a low contact resistivity (ρc) of 29 and 20 mΩ·cm2 are achieved, respectively. Taking advantage of the single-sided nature of these solution-doping processes, c-Si solar cells with poly-Si passivating contacts of opposite polarity on the respective wafer surfaces are fabricated using a simple coannealing process, achieving the best power conversion efficiency (PCE) of 18.5% on a planar substrate. Overall, the solution-doping method is demonstrated to be a simple and promising alternative to gas/ion implantation doping for poly-Si passivating-contact manufacturing.

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“…For higher throughput, such as in an industrial manufacturing line, the solution can potentially be sprayed, [ 25 ] tape cast, [ 28 ] spin‐coated, [ 27 ] or inkjet‐printed. [ 29 ] In addition, this spin‐on doping method brings the benefit of using less toxic precursors compared with conventional gas diffusion or ion implantation processes. [ 30,31 ]…”

Section: Introductionmentioning

confidence: 99%

Investigation of Gallium–Boron Spin‐On Codoping for poly‐Si/SiO_x Passivating Contacts

Truong

Yan

et al. 2021

Solar RRL

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A doping technique for p‐type poly‐Si/SiOx passivating contacts using a spin‐on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iVoc, contact resistivity ρc) are investigated. For all as‐annealed samples at different drive‐in temperatures, increasing the percentage of Ga in the solution shows a decrement in iVoc (from ∼680 to ∼610 mV) and increment in ρc (from ∼3 to ∼800 mΩ cm2). After a hydrogenation treatment by depositing a SiNx/AlOx stack followed by forming gas annealing, all samples show improved iVoc (∼700 mV with Ga‐B co‐doped, and ∼720 mV with all Ga). Interestingly, when co‐doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary‐ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically‐active Ga and B in the poly‐Si and Si layers. These results help understand the different features of the two dopants: a low ρc with B, a good passivation with Ga, their degree of activation inside the poly‐Si and Si layers, and the annealing effects.

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Inkjet printing of phosphorus dopant sources for doping poly-silicon in solar cells with passivating contacts

Cited by 16 publications

References 38 publications

Boron Spin-On Doping for Poly-Si/SiO_x Passivating Contacts

Boron Spin-On Doping for Poly-Si/SiO_x Passivating Contacts

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Investigation of Gallium–Boron Spin‐On Codoping for poly‐Si/SiO_x Passivating Contacts

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Inkjet printing of phosphorus dopant sources for doping poly-silicon in solar cells with passivating contacts

Cited by 16 publications

References 38 publications

Boron Spin-On Doping for Poly-Si/SiOx Passivating Contacts

Boron Spin-On Doping for Poly-Si/SiOx Passivating Contacts

Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Investigation of Gallium–Boron Spin‐On Codoping for poly‐Si/SiOx Passivating Contacts

Contact Info

Product

Resources

About

Boron Spin-On Doping for Poly-Si/SiO_x Passivating Contacts

Boron Spin-On Doping for Poly-Si/SiO_x Passivating Contacts

Investigation of Gallium–Boron Spin‐On Codoping for poly‐Si/SiO_x Passivating Contacts