InN: Fermi level stabilization by low‐energy ion bombardment

Piper, Louis F. J.; Veal, T. D.; McConville, Christopher F; Lu, Hai; Schaff, W. J.

doi:10.1002/pssc.200565104

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…This type of uncompensated n -type defect chemistry behavior is also seen for other materials (e.g., InN − and InAs − ) where very large carrier concentrations are sustainable. For In 2 O 3 , the E g FS has been reported to be in the range 0.30–0.65 eV above the CBM. , If you take into account that the effective mass for CdO is reported to be less than or comparable to that of In 2 O 3 , and use eq , then it is clear that CdO can sustain a much higher carrier concentration than In 2 O 3 .…”

Section: Discussionsupporting

confidence: 55%

Sources of Conductivity and Doping Limits in CdO from Hybrid Density Functional Theory

2011

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CdO has been studied for decades as a prototypical wide band gap transparent conducting oxide with excellent n-type ability. Despite this, uncertainty remains over the source of conductivity in CdO and over the lack of p-type CdO, despite its valence band maximum (VBM) being high with respect to other wide band gap oxides. In this article, we use screened hybrid DFT to study intrinsic defects and hydrogen impurities in CdO and identify for the first time the source of charge carriers in this system. We explain why the oxygen vacancy in CdO acts as a shallow donor and does not display negative-U behavior similar to all other wide band gap n-type oxides. We also demonstrate that p-type CdO is not achievable, as n-type defects dominate under all growth conditions. Lastly, we estimate theoretical doping limits and explain why CdO can be made transparent by a large Moss-Burstein shift caused by suitable n-type doping.

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Section: Discussionsupporting

confidence: 55%

Sources of Conductivity and Doping Limits in CdO from Hybrid Density Functional Theory

2011

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“…Eisenhardt et al measured a decrease of downward surface band bending by 0.2 eV during K adsorption due to disappearance of In-adlayer induced surface states above conduction band [17]. The extreme band bending at the sputtered and annealed InN surface is instead explained by the formation of donor-like defects during the sputtering (despite the low energies employed) most likely nitrogen vacancies localized within the near-surface region, consistent with earlier electron energy loss spectroscopy measurements [35]. During the preparation of clean InN surface by N 2 + ion sputtering and low temperature annealing, reformation of In and N atoms at the surface of InN occurs.…”

Section: Resultssupporting

confidence: 66%

Potassium and ion beam induced electron accumulation in InN

et al. 2015

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a b s t r a c t "We present angle resolved photoemission study of quantized electron accumulation subbands obtained from both clean and potassium deposited InN(0001) surfaces. Shifting of the quantized accumulation states toward higher binding energies upon low energy N 2 + ion bombardment or a small amount of potassium adsorption is explained by the modification of the In-adlayer induced surface states. N 2 + ion bombardment leads to a higher density of donor-type surface states by creating nitrogen vacancies near the surface. On the other hand, a small amount of K adsorbates initially donate their free electron to InN and result in more pronounced downward band bending. Eventually, further K adsorption leads to passivation of surface states and reduction of the surface electron accumulation. With the increase of the electron density, enhanced many-body interactions of electrons within the electron accumulation layer are observed."

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“…Oxidized samples were studied because the conventional cleaning method, ion bombardment and annealing, produces donorlike defects near the surface of InN and In-rich InGaN alloys, resulting in an increased near-surface electron concentration. [17][18][19][20] Unconventional methods have been successful in cleaning both InN ͑Ref. 19͒ and GaN; 21 however, cleaning InGaN alloys would require such methods to be optimized for each composition and hence cleaning is not a practical process to employ.…”

Section: Samples Of 200 Nm Thick Inmentioning

confidence: 99%

Band bending at the surfaces of In-rich InGaN alloys

Bailey

Veal

King

et al. 2008

Journal of Applied Physics

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The band bending and carrier concentration profiles as a function of depth below the surface for oxidized InxGa1-xN alloys with a composition range of 0.39 <= x <= 1.00 are investigated using x-ray photoelectron, infrared reflection, and optical absorption spectroscopies, and solutions of Poisson's equation within a modified Thomas-Fermi approximation. All of these InGaN samples exhibit downward band bending ranging from 0.19 to 0.66 eV and a high surface sheet charge density ranging from 5.0 x 10(12) to 1.5 x 10(13) cm(-2). The downward band bending is more pronounced in the most In-rich InGaN samples, resulting in larger near-surface electron concentrations. c 2008 American Institute of Physics. [DOI: 10.1063/1.3033373]\u

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InN: Fermi level stabilization by low‐energy ion bombardment

Cited by 4 publications

References 16 publications

Sources of Conductivity and Doping Limits in CdO from Hybrid Density Functional Theory

Sources of Conductivity and Doping Limits in CdO from Hybrid Density Functional Theory

Potassium and ion beam induced electron accumulation in InN

Band bending at the surfaces of In-rich InGaN alloys

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