InN/In<sub>2</sub>O<sub>3</sub> heterostructures

Wang, Ch. Y.; Cimalla, V.; Lebedev, V.; Kups, Thomas; Ecke, G.; Hauguth, S.; Ambacher, O.; Lozano, J.; Morales, F. M.; González, David

doi:10.1002/pssc.200778549

Cited by 10 publications

(3 citation statements)

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“…This is a puzzling result because the [1̅1̅0] direction is not orthogonal to [111]. The result is also at variance with the work of Ambacher and co-workers, who have made extensive studies of the growth of In 2 O 3 on Al 2 O 3 (0001) by MOCVD using In(CH 3 ) 3 and H 2 O as precursors. − At high flow rates of the In(CH 3 ) 3 precursor and at low substrate temperatures the bcc polymorph of In 2 O 3 grows with (001) orientation, giving the out of plane epitaxial relationship bcc -In 2 O 3 [001]∥Al 2 O 3 [0001]. − This is a surprising result as the (001) surface of In 2 O 3 is a polar Tasker type III surface with a higher surface energy than the quadrupolar (111) surface. , In-plane, the films were found to be built up from square or rectangular domains rotated by 30° relative to each other with bcc -In 2 O 3 [11̅0]∥Al 2 O 3 [112̅0], etc. However, at higher temperatures and lower flow rates a biphasic mixture of bcc- and rh -In 2 O 3 was obtained: phase pure rh -In 2 O 3 (0001) could be grown at 600 °C with very low In(CH 3 ) 3 flow rates of around 4 μmol/min. ,, Simple epitaxy with rh -In 2 O 3 [0001]∥Al 2 O 3 [0001] and rh -In 2 O 3 [101̅0]∥A1 2 O 3 [101̅0] was observed.…”

Section: Introductionmentioning

confidence: 93%

Domain Matching Epitaxial Growth of In₂O₃ Thin Films on α-Al₂O₃(0001)

Zhang

Lazarov

Galindo

et al. 2012

Crystal Growth & Design

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Oxygen plasma assisted molecular beam epitaxy was used to grow thin films of In2O3 on α-Al2O3(0001) over a range of substrate temperatures between 300 and 750 °C. The crystal structures and morphologies were examined by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. In all cases, the thermodynamically stable body-centered cubic phase bcc-In2O3 predominates in the films, with an epitaxial relationship In2O3(111)∥Al2O3(0001) and In2O3 [11̅10]∥Al2O3[101̅0] determined by matching between the sublattice oxygen atoms in Al2O3(0001) and the In atoms in In2O3(111): this involves a 30° rotation of the epilayer unit cell relative to that of the substrate and a 3:2 coincidence structure. A minority fraction of metastable rhombohedral rh-In2O3(0001) can be stabilized for substrate temperatures below 550 °C due to the similarity in the bonding symmetries between rh-In2O3 and α-Al2O3. Despite the large mismatches between In2O3 and Al2O3 for the two epitaxial systems discussed above (−13.2% for bcc-In2O3 and +15.1% for rh-In2O3), we show that the epitaxy can be maintained in both cases by matching small but different integral multiples of lattice planes of the In2O3 and the substrate at the interface between the two. Thus, the strain is effectively released by dislocations localized at the interface. This so-called domain matching epitaxial growth mode may open up a new route to fabrication of high-quality crystalline thin films of oxides on highly mismatched substrates.

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Section: Introductionmentioning

confidence: 93%

Domain Matching Epitaxial Growth of In₂O₃ Thin Films on α-Al₂O₃(0001)

Zhang

Lazarov

Galindo

et al. 2012

Crystal Growth & Design

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“…It has been reported that after the initial growth of InN and subsequent formation of oxynitride, a mixed crystalline phase of In 2 O 3 and InN crystals was grown after a short annealing time (10 min) at 550°C [ 35 ]. The cubic In 2 O 3 phase was formed layer-by-layer, after subsequent oxidization of the hexagonal InN layers [ 36 ].…”

Section: Resultsmentioning

confidence: 99%

Long-term oxidization and phase transition of InN nanotextures

et al. 2011

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The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.

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“…In related reports, the growth of cubic (001) InN films on (001) In 2 O 3 buffer layers was described. [4][5][6] On the other hand, Song et al reported the band offset of InN/In 2 O 3 heterojunctions, 7) and Shih et al reported the disappearance of pin holes in InN grown on a ZnO substrate caused by the existence of the In 2 O 3 layer formed by an In/ZnO reaction. 8) However, there have been no concrete experimental data about the effects of the (111) In 2 O 3 underlayer on the crystallinity of hexagonal (0001) InN and InGaN thin films grown on c-face sapphire substrates.…”

mentioning

confidence: 96%

Effect of In₂O₃ Underlayer on Crystallinity of Hexagonal InN and InGaN Thin Films Grown on c-Face Sapphire Substrates

Sato

Ito

2011

Jpn. J. Appl. Phys.

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In 2 O 3 thin films were applied as underlayers for the growth of hexagonal InN and InGaN thin films on sapphire c-face substrates. Crystallinities of the nitride thin films grown with and without the In 2 O 3 underlayer were compared, and the effect of the underlayer on these crystallinities was investigated. The application of (111)-faced heteroepitaxial In 2 O 3 underlayers brought clear improvement effects on the crystallinities. In 2 O 3 can be added to one of the promising underlayer materials for the hexagonal nitride thin film growth on the c-face sapphire substrate in addition to the typical nitride buffer layer materials, such as GaN and AlN. #

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InN/In₂O₃ heterostructures

Cited by 10 publications

References 8 publications

Domain Matching Epitaxial Growth of In₂O₃ Thin Films on α-Al₂O₃(0001)

Domain Matching Epitaxial Growth of In₂O₃ Thin Films on α-Al₂O₃(0001)

Long-term oxidization and phase transition of InN nanotextures

Effect of In₂O₃ Underlayer on Crystallinity of Hexagonal InN and InGaN Thin Films Grown on c-Face Sapphire Substrates

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InN/In2O3 heterostructures

Cited by 10 publications

References 8 publications

Domain Matching Epitaxial Growth of In2O3 Thin Films on α-Al2O3(0001)

Domain Matching Epitaxial Growth of In2O3 Thin Films on α-Al2O3(0001)

Long-term oxidization and phase transition of InN nanotextures

Effect of In2O3 Underlayer on Crystallinity of Hexagonal InN and InGaN Thin Films Grown on c-Face Sapphire Substrates

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InN/In₂O₃ heterostructures

Domain Matching Epitaxial Growth of In₂O₃ Thin Films on α-Al₂O₃(0001)

Domain Matching Epitaxial Growth of In₂O₃ Thin Films on α-Al₂O₃(0001)

Effect of In₂O₃ Underlayer on Crystallinity of Hexagonal InN and InGaN Thin Films Grown on c-Face Sapphire Substrates