InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage

Alvi, Naveed ul Hassan; Rodriguez, Paul E. D. Soto; Aseev, Pavel; Gómez, Valentín Bote; Alvi, Ameed ul Hassan; Hassan, Waheed ul; Willander, Magnus; Nötzel, R.

doi:10.1016/j.nanoen.2015.02.017

Cited by 65 publications

(41 citation statements)

References 39 publications

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“…The anodic peak current of sample M3 is the highest. This confirms that the combination of the highest p + SD for c-plane InN with the zero-dimensional QD electronic properties leads to the strongest increase of catalytic oxidation activity as observed in the biosensor and water splitting experiments [5,6],…”

Section: Effect Ofinn Qds On Nwn and ¡Nganfilmsupporting

confidence: 73%

“…We have recently demonstrated unprecedented performance of InN quantum dots (QDs) grown on planar In-rich InGaN layers on c-plane GaN/Sapphire templates as biosensor transducers and photoelectrochemical electrodes [5,6]. This was attributed to the high density of positively charged surface donor states (p + SD ) of cplane InGaN, increasing with In content above 40-50% up to 2-3 10 13 cm~2 for pure InN, together with the zero-dimensional QD electronic properties.…”

Section: Introductionmentioning

confidence: 99%

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Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Rodriguez

Nash

Aseev

et al. 2015

Electrochemistry Communications

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Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency.

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Section: Effect Ofinn Qds On Nwn and ¡Nganfilmsupporting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Rodriguez

Nash

Aseev

et al. 2015

Electrochemistry Communications

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“…The nano-size structures in photovoltaic 58,59 cells increase the area of exposure of conducting surfaces which enhances the collection of solar energy. The use of mesoporous nanostructures 60 like quantum dots, carbon nanotubes and fullerenes in solar cells makes them cheaper, lighter and increases their efficiency, electrical conductivity, mechanical strength, durability and corrosion resistance [61][62][63] . Use of lead-selenide 64 in photovoltaic cells increases their efficiency by increasing the number of electrons released per photon.…”

Section: Nanotechnology In Energymentioning

confidence: 99%

Nanotechnology for Achieving Green-Economy Through Sustainable Energy

Pandey¹

2018

RJC

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Mankind is struggling with so many problems related to an environment like pollution, energy demand and supply, soil security, availability of food etc. The pollution caused because of the improper management of natural resources is raising serious concerns towards environment safety and sustainability. Chemistry plays a fundamental role in the sustainability of environment by promoting green technologies and advances in new and less or nonhazardous materials for industries, generating and promoting sources for renewable energy ,environmental protection. Keeping in mind the demand of energy for all the developmental processes, it is very much necessary to promote the production and consumption of sustainable energy, in turn, boosting green economy. For encouraging a green economy it is necessary to find new ways of producing green energy by using nanoparticles. This review will focus on the evaluation of the green nanochemistry for sustainable development and will highlight new advances in the green economy by using nanomaterials

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“…Additionally, III-nitrides are direct bandgap semiconductors and have very wide bandgap range (0.68–6.2 eV) [11,12,13], making them promising candidates for large-scale applications such as photovoltaics (PVs) [14,15,16], photocatalysis [17,18,19], and photocatalytic water splitting [20,21,22]. Moreover, due to the large piezoelectricity of III-nitrides, they were considered as potential materials for flexible (opto)electronic devices [23,24,25].…”

Section: Introductionmentioning

confidence: 99%

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

Zhao

Wang

et al. 2016

Nanomaterials

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Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

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InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage

Cited by 65 publications

References 39 publications

Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Nanotechnology for Achieving Green-Economy Through Sustainable Energy

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

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