InN Nanowires: Growth and Optoelectronic Properties

Calarco, Raffaella

doi:10.3390/ma5112137

Cited by 25 publications

(10 citation statements)

References 55 publications

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“…InN is a IIIA-nitride semiconductor which has been thoroughly studied for bandgap engineering in combination with GaN and/or AlN in development of blue and UV LEDs, and laser diodes [17]. It is also possible to grow nanowires of InN for optoelectronic and piezoelectric applications [18,19]. Experimental [20,21,22] and theoretical [23,24,25] studies also suggest YN for alternative optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Ab initio calculations and experimental study of piezoelectric Y In1−N thin films deposited using reactive magnetron sputter epitaxy

et al. 2016

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By combining theoretical prediction and experimental verification we investigate the piezoelectric properties of yttrium indium nitride (Y x In 1−x N). Ab-initio calculations show that the Y x In 1−x N wurtzite phase is lowest in energy among relevant alloy structures for 0 ≤ x ≤ 0.5. Reactive magnetron sputter epitaxy was used to prepare thin films with Y content up to x = 0.51. The composition dependence of the lattice parameters observed in the grown films is in agreement with that predicted by the theoretical calculations confirming the possibility to synthesize a wurtzite solid solution. An AlN buffer layer greatly improves the crystalline quality and surface morphology of subsequently grown Y x In 1−x N films. The piezoelectric response in films with x = 0.09 and x = 0.14 is observed using piezoresponse force microscopy. Theoretical calculations of the piezoelectric properties predict Y x In 1−x N to have comparable piezoelectric properties to Sc x Al 1−x N.

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Section: Introductionmentioning

confidence: 99%

Ab initio calculations and experimental study of piezoelectric Y In1−N thin films deposited using reactive magnetron sputter epitaxy

et al. 2016

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“…III-nitride materials, namely, AlN, GaN, InN, and their alloys, have attracted enormous research attention in the past decades owing to their superior properties, such as direct wide band gap, high electron mobility, and thermal/chemical resistance. − Various optoelectronic devices, such as light-emitting diodes, solar cells, field effect transistors, nanogenerators, and photodetectors, have already been demonstrated using III-nitride materials. − Recently, one-dimensional (1-D) nanostructures, particularly vertically aligned nanorods/nanowires, are widely studied for their application in versatile optoelectronic devices due to their high surface to volume ratio, high crystalline quality, and quantum confinement effect. − …”

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confidence: 99%

Ultraviolet-C Photodetector Fabricated Using Si-Doped n-AlGaN Nanorods Grown by MOCVD

Kang

Chatterjee

et al. 2017

ACS Photonics

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Aluminum gallium nitride (Al x Ga 1−x N) alloy films and nanostructures have attracted extensive research attention for ultraviolet (UV) and deep ultraviolet optoelectronic applications. However, the morphology-controlled growth of high-quality Al x Ga 1−x N quasi one-dimensional nanostructures has been limited by the complex multicomponent phase diagram and inhomogeneous composition distribution. Here, we demonstrated the growth of Si-doped ntype compositionally uniform Al 0.45 Ga 0.55 N nanorods employing a metal organic chemical vapor deposition (MOCVD) technique for the application in UV-C photodetectors. A two-step growth process, namely, growth of undoped GaN seeds and subsequent growth of n-AlGaN nanorods over GaN seeds, has been developed. Various characterization techniques have been used to study the crystalline quality, orientation, and optical properties of the realized nanorods. Field emission scanning electron microscopy revealed a uniform distribution of vertically aligned n-AlGaN nanorods over the GaN seeds. X-ray diffraction studies showed that the grown nanorods are preferentially (0002) oriented with hexagonal crystal structure. High-resolution transmission electron microscopy images indicated the nanorods are single crystalline in nature, without any significant crystalline defects and dislocations. Cathodoluminescence spectra of AlGaN nanorods displayed a strong band edge excitonic emission peak at 276 nm at 77 K and shifted to lower energy as the temperature increased to 300 K. The photocurrent current (I p ) of the fabricated photoconductive device was significantly higher in the UV region (250−276 nm) compared to the corresponding dark current. The photocurrent displayed a nonlinear power density (P)-dependent characteristics (I p ∝ P 0.64 ). The photoresponsivity and sensitivity of the fabricated photodetector were estimated to be ∼115 mA/W and ∼64%, respectively, in the UV-C region.

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“…The synthesis of PZT nanowires also includes a high temperature phase which limits the choice of substrate [9,10]. Both InN and AlN nanowires exhibits piezoelectric properties that are equal or better than ZnO nanowires but the nanowire growth is at high temperature, which again limits the choice of substrate [11,12,13,14]. In contrast, ZnO nanowires are easily synthesised at low temperature which means the nanogenerator can be manufactured on a variety of substrates.…”

Section: Introductionmentioning

confidence: 96%