InN@SiO<sub>2</sub> Nanomaterials as New Blue Light Emitters

Munusamy, Prabhakaran; Mahalingam, Venkataramanan; Veggel, Frank C. J. M. van

doi:10.1002/ejic.200700780

Cited by 4 publications

(14 citation statements)

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“…The Raman spectrum of DTES-treated Eu 2+ -doped GaN@SiO 2 nanocomposites (Figure b) shows an additional peak at 650 cm –1 which is assigned to the symmetrical SiO 3 stretching frequency of DTES in agreement with surface bonded O 3 Si-R groups . Furthermore the broad peaks between 270 and 450 cm –1 are assigned as a network bending mode of Si–O–Si vibration of SiO 2 nanoparticles. , Figure S7 shows the IR spectrum of DTES-treated Eu 2+ -doped GaN@SiO 2 nanocomposites. The vibrational peak extended over the range of 550–750 cm –1 is assigned to GaN which is also present in untreated Eu 2+ -doped GaN@SiO 2 nanocomposites.…”

Section: Resultsmentioning

confidence: 88%

“…37 Furthermore the broad peaks between 270 and 450 cm À1 are assigned as a network bending mode of SiÀOÀSi vibration of SiO 2 nanoparticles. 38,39 Figure S7 shows the IR spectrum of DTES-treated Eu 2+ -doped GaN@SiO 2 nanocomposites. The vibrational peak extended over the range of 550À750 cm À1 is assigned to GaN which is also present in untreated Eu 2+ -doped GaN@SiO 2 nanocomposites.…”

Section: ' Results and Discussionmentioning

confidence: 99%

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Blue Electroluminescence from Eu²⁺-Doped GaN@SiO₂ Nanostructures Tuned to Industrial Standards

Gautam

Veggel

2011

Chem. Mater.

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Significant progress in solid state lighting has been achieved since the development of nitride-based blue light-emitting diodes (LEDs) from Nichia chemical industries, 1À5 but reliable and highly efficient blue LEDs are still in high demand especially polymer-based LEDs because of their cheap, flexible, and substrate suitability for daily use. 6À9 Particularly, blue-emitting materials with CIE coordinates nearly X = 0.15 and Y = 0.15 are really important as defined by the Department of Energy (DOE) and Optoelectrical Industry Development association (OIDA). 9 Blue-emitting materials are not only a major constituent for red-green-blue full color displays but also a key emitting element for generating white light. For example, combination of the GaN-based blue LED (λ emi ∼ 465 nm) with the Y 3 Al 5 O 12 : Ce 3+ yellow phosphor (λ emi ∼ 555 nm) gives white light. 4 Blue and UV LEDs also have great prospect in data-storage capacities in compact discs (CDs) and digital video discs (DVDs), because the storage density of compact discs is inversely proportional to the square of the laser wavelength. 2 Despite the application of organic electroluminescent devices in making blue organic lightemitting diodes (OLEDs), their low efficiency and stability still remain a challenge and calls for the use of very robust materials such as GaN. 10À13 GaN has a direct wide band gap (3.4 eV) at room temperature and is a promising host electroluminescence (EL) material for multicolor emitting phosphor. Doping of GaN thin films with Tm 3+ , Er 3+ , and Eu 3+ ions results, upon excitation, in blue, green, and red emission, respectively. 14 Furthermore enhancement in the blue emission intensity was observed on doping Tm 3+ in Al 1 Ga 1-X N instead of GaN thin film. The CIE coordinates were tuned to X = 0.13, Y = 0.09, and the enhanced emission from Tm 3+ ions was proportional to the Al content in the film. 15 Recently, Yang et al. 16 fabricated GaN-based blue LEDs with an EL peak centered at 447 nm. In another report Zhao et al. 17 obtained blue EL by using Au/AlN/p-Si heterostructure and had an EL peak centered at 490 nm. The CIE coordinates are X = 0.25, Y = 0.33, as calculated by us, which show a deviation from the blue region.ZnO based heterostructures were also applied in the fabrication of EL devices. The blue EL emission from n-ZnO/nMg y Zn 1-y O/Zn 1-x Cd x O/P-SiC heterojunction diodes as reported by Nakamura et al. 18 has an EL peak centered at 480 nm. The CIE coordinates, as calculated by us, are X = 0.29, Y = 0.32, which is away from the required blue. Li et al. 6 also fabricated a blue EL device using ZnO based heterojunction diodes in the presence of active layer of CdZnO with an El peak centered at 459 nm. Although the peak centered in the blue, the CIE coordinates, as calculated by us, are X = 0.62, Y = 0.32, again away from blue. Ultraviolet-blue LEDs device fabricated by Guo et al. 19 used ZnO nanowires/polymer/p-GaN in heterojunction structure with the EL emission peaks were at 400 nm. The CIE coordinates, as calculat...

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Section: Resultsmentioning

confidence: 88%

Section: ' Results and Discussionmentioning

confidence: 99%

Blue Electroluminescence from Eu²⁺-Doped GaN@SiO₂ Nanostructures Tuned to Industrial Standards

Gautam

Veggel

2011

Chem. Mater.

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“…37 Van Veggel and co-workers also synthesized GdF 3 /LaF 3 core-shell 38 and InN@SiO 2 core-shell nanomaterials by a simple precipitation reaction. 39 Mai et al reported solution based synthesis of core-shell a-NaYF 4 : Yb-Er@a-NaYF 4 and b-NaYF 4 :Yb-Er@a-NaYF 4 nanocrystals with controlled size via a unique delayed nucleation pathway using trifluoroacetates as precursors in hot solutions of oleic acid/oleylamine/1-octadecene. 40 Capobianco and co-workers synthesized NaGdF 4 :Ce 3+ and Tb 3+ /NaYF 4 core-shell nanoparticles using oleic acid and oleylamine as the coordinating organic ligands.…”

Section: General Synthetic Strategies For Preparing Rare Earth Based ...mentioning

confidence: 99%

Impacts of core–shell structures on properties of lanthanide-based nanocrystals: crystal phase, lattice strain, downconversion, upconversion and energy transfer

2012

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“…In addition we have developed a strategy to avoid the sintering of the nanoparticles at a high temperature. [23][24][25][26][27] We systematically studied the effect of Mg 2+ and Zn 2+ incorporation on the optical and structural characteristics of the GaN nanoparticles. With XRD we analyzed the formation of the intermediate products: Ga 2 O 3 , Ga 2 O 3 : Mg/Zn, Ga 2 MgO 4 /Ga 2 ZnO 4 , and the presence of dopants in the final GaN with respect to their concentrations in the initial mixture.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural characterization of blue-emitting Mg2+- and Zn2+-doped GaN nanoparticles

et al. 2009

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We show blue photoluminescence ($425 nm) from both Mg 2+ -and Zn 2+ -doped GaN nanoparticles. The effect of the doping concentration of these ions on the structural and optical properties was systematically studied using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), photoluminescence (PL) and Raman spectroscopy. Starting from nitrate salts of gallium, zinc and magnesium we observed the formation of Mg 2+ -and Zn 2+ -doped Ga 2 O 3 accompanied by Ga 2 O 3 . During the thermal cycle for the formation of GaN some of the zinc evaporates because of its relatively low boiling point. The PL intensity is proportional to the final concentration of the dopant ion in the final product and a weaker band is observable at a higher energy corresponding to the undoped GaN. Raman spectroscopic analysis confirms the distortion of the GaN lattice due to the incorporation of Mg 2+ and Zn 2+ .

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InN@SiO₂ Nanomaterials as New Blue Light Emitters

Cited by 4 publications

References 32 publications

Blue Electroluminescence from Eu²⁺-Doped GaN@SiO₂ Nanostructures Tuned to Industrial Standards

Blue Electroluminescence from Eu²⁺-Doped GaN@SiO₂ Nanostructures Tuned to Industrial Standards

Impacts of core–shell structures on properties of lanthanide-based nanocrystals: crystal phase, lattice strain, downconversion, upconversion and energy transfer

Optical and structural characterization of blue-emitting Mg2+- and Zn2+-doped GaN nanoparticles

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InN@SiO2 Nanomaterials as New Blue Light Emitters

Cited by 4 publications

References 32 publications

Blue Electroluminescence from Eu2+-Doped GaN@SiO2 Nanostructures Tuned to Industrial Standards

Blue Electroluminescence from Eu2+-Doped GaN@SiO2 Nanostructures Tuned to Industrial Standards

Impacts of core–shell structures on properties of lanthanide-based nanocrystals: crystal phase, lattice strain, downconversion, upconversion and energy transfer

Optical and structural characterization of blue-emitting Mg2+- and Zn2+-doped GaN nanoparticles

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InN@SiO₂ Nanomaterials as New Blue Light Emitters

Blue Electroluminescence from Eu²⁺-Doped GaN@SiO₂ Nanostructures Tuned to Industrial Standards

Blue Electroluminescence from Eu²⁺-Doped GaN@SiO₂ Nanostructures Tuned to Industrial Standards