Innovation IGCT main drives

Lyons, J.P.; Vlatkovic, V.; Espelage, Paul M.; Boettner, F.H.; Larsen, E.V.

doi:10.1109/ias.1999.799212

Cited by 38 publications

(11 citation statements)

References 18 publications

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“…For high power applications, the PWM method should pay special attention to the switching losses while fulfilling the harmonic requirements. When the output frequency is low, the continuous SVPWM can give a good output current harmonic contents within a PWM period [9] [10]. As the output frequency is increased, the discontinuous SVPWM whose switching times are 2/3 of the continuous one may give a better performance [10] [11].…”

Section: Introductionmentioning

confidence: 98%

Three level Space Vector Pulse Width Modulation without even order harmonics fit for asymmetrical uniform sampling

Yin

Tan

Liu

et al. 2010

2010 IEEE International Conference on Industrial Technology

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For three level Space Vector Pulse Width Modulation (SVPWM), it is important to make sure that the phase voltage will not change by two levels in one time. It is found out that some even order harmonic elimination PWM method may cause the phase voltage to jump by two steps when asymmetrical uniform sampling technique is used. The condition when two-level voltage jump happens is found out. A new three level SVPWM containing no even order harmonics suitable for asymmetrical sampling is provided. Both simulation and experiment of the new SVPWM show that no two-level voltage jump happens and the even harmonics are eliminated.

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Section: Introductionmentioning

confidence: 98%

Three level Space Vector Pulse Width Modulation without even order harmonics fit for asymmetrical uniform sampling

Yin

Tan

Liu

et al. 2010

2010 IEEE International Conference on Industrial Technology

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“…As an example, Fig. 1 shows an IGCT based regenerative three-level NPC VSC for main drives [1]. Numerous works have been done regarding the operation, design, control and applications of the three-level NPC converter since its introduction [3].…”

Section: Introductionmentioning

confidence: 99%

“…It provides the advantages of lower voltage stress across the semiconductor devices and lower harmonic distortion. The three-level NPC converter represents a category of implementations, including the regenerative diode clamped inverter/rectifier [1] and the non-regenerative Viennatype rectifier [2]. As an example, Fig.…”

Section: Introductionmentioning

confidence: 99%

Fault Detection and Protection of Three-Level Neutral-Point-Clamped PWM Voltage Source Converters

Wang

Lai

Yuan

et al. 2008

2008 IEEE Industry Applications Society Annual Meeting

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This paper presents the detection and protection methods uniquely associated with three-level NPC voltage source converters. The line-to-ground fault can cause significant dc-link neutral voltage and therefore can be effectively detected and located through monitoring the voltage without extra hardware. The inner device short in the three-level phase-leg can lead to dclink voltage unbalance and doubling the stress on capacitors and devices, which must be suppressed for the safe operation of the converter. Two overvoltage limiting methods are proposed to limit the overvoltage. The design of both the ground fault detection and overvoltage limiting has been covered in the paper. The schemes are verified through simulation and experiments.

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“…Today such an equipment can be realized with two series-connected 4.5 -5.5 kV IGCTs which easily achieve 1 kHz PWM but require R-C snubbers for the series connection [4]. Though simple enough, the number of components required at the switch level increases nearly three-fold and becomes an obstacle to the widespread use of power electronics at this voltage level.…”

Section: A Performance Considerationsmentioning

confidence: 99%

“…Though simple enough, the number of components required at the switch level increases nearly three-fold and becomes an obstacle to the widespread use of power electronics at this voltage level. Today's 3-level IGCT inverters for the 3300 V line can operate at up to 900 Hz PWM [4] or higher. At 4160 V RMS line, PWM frequencies of 500 Hz are typical [5].…”

Section: A Performance Considerationsmentioning

confidence: 99%

High voltage dual-gate turn-off thyristors

Apeldoorn¹,

Steimer²,

Streit³

et al.

Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248)

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The quest of the last ten years for high power snubberless semiconductor switches has resulted in IGCTs (Integrated Gate-Commutated Thyristors) and IGBTs (InsulatedGate Bipolar Transistors) currently available up to 6 kV. Both devices have inherently short switching times but are nevertheless frequency limited by their switching losses. 10 kV IGCTs have been shown to be useable up to about 5.5 kV DC and 400 Hz [1]. However market needs for PWM (pulse width modulation) at about 1 kHz cannot be satisfied above 3 kV DC, due to the inherent turn-off losses of the aforementioned bipolar components. The fundamental barrier presented by the charge stored in the n-base of IGBTs and IGCTs must be reduced at turn-off without increasing conduction losses. The use of a second, anode-side gate (n-gate) to reduce the high plasma density at turn-off has already been described for conventional snubbered GTOs [2,3] but the technique has not yet been applied to a snubberless device such as the IGCT. This paper will show the turn-off loss reductions which can be obtained by "grafting" a second gate to the conventional IGCT and will compare these results to those of a new type designed specifically for "gateassisted turn-off".

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Innovation IGCT main drives

Cited by 38 publications

References 18 publications

Three level Space Vector Pulse Width Modulation without even order harmonics fit for asymmetrical uniform sampling

Three level Space Vector Pulse Width Modulation without even order harmonics fit for asymmetrical uniform sampling

Fault Detection and Protection of Three-Level Neutral-Point-Clamped PWM Voltage Source Converters

High voltage dual-gate turn-off thyristors

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