Innovative Gap-Fill Strategy for 28 nm Shallow Trench Isolation

Tavernier, Aurélien; Favennec, L.; Chevolleau, T.; Jousseaume, V.

doi:10.1149/1.3700888

Cited by 10 publications

(8 citation statements)

References 3 publications

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“…We use 300 mm diameter Czochralsky (CZ)-grown Silicon (001) wafers, sliced from the ingot with a slight 0.15° miscut angle towards either the [110] or [100] direction. Prior to the H2 annealing, the native oxide is removed by SICONI TM process 35 . After transferring the wafers under vacuum, the H2 annealing is performed directly in a 300 mm Applied Materials MOCVD reactor specifically designed for III-V materials growth and which uses purified H2 as carrier gas.…”

mentioning

confidence: 99%

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Martin

Caliste

Cipro

et al. 2016

Applied Physics Letters

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The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si CMOS logic with photonic devices. To reach this aim, several hurdles should be solved, and more particularly the generation of antiphase boundaries (APBs) at the III-V/Si(001) interface. Density functional theory (DFT) has been used to demonstrate the existence of a double-layer steps on nominal Si(001) which is formed during annealing under proper hydrogen chemical potential. This phenomenon could be explained by the formation of dimer vacancy lines which could be responsible for the preferential and selective etching of one type of step leading to the double step surface creation. To check this hypothesis, different experiments have been carried in an industrial 300 mm MOCVD where the total pressure during the anneal step of Si (001) surface has been varied. Under optimized conditions, an APBs-free GaAs layer was grown on a nominal Si(001) surface paving the way for III-V integration on silicon industrial platform.

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mentioning

confidence: 99%

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Martin

Caliste

Cipro

et al. 2016

Applied Physics Letters

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“…It is suggested that NH 4 F and HF reactants are formed in the NH 3 /NF 3 remote plasma chamber by NF 3 (respectively NH 3 ) dissociation into NF x (x = 1-2) and F [respectively NH x (x = 1-2) and H] and subsequent recombination of these fragments together and with the feed gases, as described by Eqs. ( 2)-( 5), 17,[23][24][25]…”

Section: Discussion On the Etching Mechanisms Of Si 3 N 4 Films Exposed To Nh 3 /Nf 3 Remote Plasmamentioning

confidence: 99%

“…It has already been reported that the etching of Si 3 N 4 or SiO 2 films exposed to NH 3 /NF 3 remote plasma proceeds with the formation of an ammonium hexafluorosilicate (NH 4 ) 2 SiF 6 salt layer on their surface. 17,[23][24][25] Figures 2(a) and 2(b) show the scanning electronic microscopy (SEM) and atomic force microscopy (AFM) images of the salt layer formed on a Si 3 N 4 film exposed to the NH 3 /NF 3 RP process at 60 °C. It looks like a tangle of polycrystals separated with cracks and voids.…”

Section: Kinetic Ellipsometrymentioning

confidence: 99%

Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching

Renaud

Petit-Etienne

Barnes

et al. 2019

Journal of Applied Physics

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This article proposes an original method to achieve topographically selective etching. It relies on cycling a two-step process comprising a plasma implantation step and a removal etching step using remote plasma source process. Both steps can be achieved in the same reactor prototype chamber, which has the capability to produce both capacitively coupled plasma and remote plasma (RP) discharges. It is shown that in RP processes, an incubation time exists before the etching starts. The introduction of a plasma implantation step prior to the RP step allows us to selectively functionalize the horizontal surfaces of the material with respect to the vertical surfaces, thanks to the ion directionality. The modifications induced by the implantation allow us to modify the incubation time between an implanted and a nonimplanted material offering a process window with infinite etch selectivity between horizontal and vertical surfaces. This approach has been demonstrated on Si 3 N 4 blanket films with the perspective to be applied to the Si 3 N 4 spacer etching process in which etch selectivity is a key issue. For this particular application, a cycling process comprising an H 2 plasma implantation and a He/NH 3 /NF 3 remote plasma process has been developed. The H 2 implantation modifies the Si 3 N 4 surface state by incorporating oxygen contaminants coming from the reactor wall and creating dangling bonds. This surface functionalization considerably reduces the incubation time. New insights into the etching mechanisms of Si 3 N 4 films exposed to NH 3 /NF 3 remote plasma are proposed and explain why the presence of Si-O bonds is mandatory for the initiation of the etching.

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“…This assumption was tested with a 600 Torr/ 900°C/10 min H 2 annealing of different on-axis Si(001) wafers. Prior to the H 2 annealing, the native oxide is removed by SICONI™ process [14]. Atomic force microscopy (AFM) images of Figure 4a.…”

Section: Ball-and-stick Model Of Iii-v-on-si With {110} and {111}-apbmentioning

confidence: 99%

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Martin¹,

Baron²,

Bogumulowicz³

et al. 2021

Post-Transition Metals

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III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solutions to get rid of antiphase domains for GaAs grown on exact Si(100). To reduce the threading dislocations density, efficient ways based on either insertion of InGaAs/GaAs multilayers defect filter layers or selective epitaxy in cavities are implemented. All these solutions allows fabricating electrically pumped laser structures based on InAs quantum dots active region, required for photonic and sensing applications.

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Innovative Gap-Fill Strategy for 28 nm Shallow Trench Isolation

Cited by 10 publications

References 3 publications

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

Two-step cycling process alternating implantation and remote plasma etching for topographically selective etching: Application to Si3N4 spacer etching

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

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