Inorganic ferroelectric thin films and their composites for flexible electronic and energy device applications: current progress and perspectives

Abstract

Scientific researches are at the inception of flexible energy devices and ferroelectric (FE) materials mark their signature in the process. Particularly, devices based on inorganic FE (IFE) materials find a...

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

“…57,156,157 As the most studied and most widely applied ferroelectrics, the typical perovskite materials include Pb(Zr,Ti)O 3 (PZT), 158 BaTiO 3 (BTO), 159 BiFeO 3 (BFO), 160 KNbO 3 (KNN), 19 and so on, which can be further divided into two categories namely lead-based and lead-free compounds. 161 The excellent electromechanical properties and the mature fabrication process make PZT-based materials occupy a monopolistic position in the world ferroelectric ceramics market. These days, lead-free perovskite materials such as BTO and KNN have attracted considerable interest due to their good overall property and environmental compatibility.…”

“…Traditional ferroelectrics can be generally categorized into displacement type, Yang-Taylor type, and ordering-disorder type ferroelectric. , It is worth noting that the earliest discovered ferroelectric is the order–disorder type Rochelle salt, while the most common traditional ferroelectric is the displacement type inorganic perovskite with an ABO 3 structure as shown in Figure d. ,, As the most studied and most widely applied ferroelectrics, the typical perovskite materials include Pb­(Zr,Ti)­O 3 (PZT), BaTiO 3 (BTO), BiFeO 3 (BFO), KNbO 3 (KNN), and so on, which can be further divided into two categories namely lead-based and lead-free compounds . The excellent electromechanical properties and the mature fabrication process make PZT-based materials occupy a monopolistic position in the world ferroelectric ceramics market.…”

“…In addition to perovskite, the ferroelectric oxides with the pyrochlore, the tungsten-bronze, the fluorite, and the bismuth layer structure are also widely studied. , Among these ferroelectric oxides, doped hafnium oxide (HfO 2 ) with a fluorite structure is an emerging ferroelectric material, which can maintain robust ferroelectricity at an ultrathin thickness (<10 nm). , In this regard, the ferroelectric properties of perovskite will inevitably deteriorate at reduced thickness unless eliminating the drawbacks such as lattice mismatch via utilizing an advanced frication process and carefully selecting substrates. Besides, in contrast to the growth of perovskite strictly confined to lattice-matched substrates in high temperature and oxygen atmosphere, the conformal growth of doped HfO 2 film thin on Si can be achieved at a low temperature, demonstrating that doped HfO 2 has good compatibility with the CMOS process .…”

Memristor-based neural networks: a bridge from device to artificial intelligence

“…In three-terminal ferroelectric synaptic devices, the presynaptic processes are usually imposed on the gate electrode, thus affecting synaptic plasticity. 122 At present, ferroelectric materials, including inorganic ferroelectrics, 123 organic ferroelectrics, 124 and molecular ferroelectrics, 125 have been used in information storage and artificial synaptic devices to simulate synaptic function. In particular, organic ferroelectric synapses are suitable for different functional applications according to the actual needs on different occasions and can be used to establish cognitive, memory, visual, tactile and other perception and information processing systems.…”

Dielectric behaviour of nitrogen doped perovskite SrTiO3−δNδ films

“…Being an excellent platform for investigations of the fundamentals of crystal chemistry and properties and the synthesis of perovskite oxides, STO steadily attracts high research interest. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Among all perovskite oxides, FEs are the most renowned, most widely employed in electronics and photonics, as well as promising for advanced catalysis and life sciences. [20][21][22][23][24][25][26] FEs exhibit high dielectric permittivity and are first-rate high-permittivity dielectrics for miscellaneous modern capacitors.…”