Inorganic hardmask development for extreme ultraviolet patterning

Silva, Anuja De; Dutta, Ashim; Meli, Luciana; Yao, Yiping; Mignot, Yann; Guo, Jing; Felix, Nelson

doi:10.1117/1.jmm.18.1.011004

Cited by 5 publications

(5 citation statements)

References 22 publications

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“…As a control, we wanted to ensure that the benefit of increasing z-blur could not be equivalently obtained using a larger isotropic blur. To test, we used the fact that 12 × 12 × 24 ≈ 15.1 3 to generate an equivalent-volume isotropic acid blur condition. Figure 10(a) shows the CD distribution of 10 5 contacts simulated under these new conditions.…”

Section: Larger Isotropic Blurmentioning

confidence: 99%

“…To overcome these challenges, resist manufacturers and researchers have turned to exploring new avenues for improving patterning performance ranging from all together new material systems to process-based solutions using underlayers [2][3][4] and additives. Common among these efforts is a recognition that better resist materials are needed for device scaling to continue.…”

Section: Introductionmentioning

confidence: 99%

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Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Long

Neureuther

Naulleau

2021

J. Micro/Nanopattern. Mats. Metro.

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Background: As target feature sizes for EUV lithography shrink, it is becoming ever more important to understand the intricate details of photoresist materials, including the role of the "third dimension"-the dimension perpendicular to the wafer. With resist thicknesses shrinking toward the single-digit nanometer scale alongside target linewidths, small changes in resist performance in this dimension will have a greater overall effect on pattern quality.Aim: To use modeling to understand the effect that the third dimension has on resist performance, in particular the interplay between the third dimension and resist stochastics.Approach: We developed a three-dimensional version of the multivariate Poisson propagation model, a stochastic resist simulator. As a test case for the model, we explore the role of acid diffusion in the so-called third dimension by simulating 10 5 vias at a series of z-blur conditions.Results: Our model suggests that increased z-blur yields an improvement in both dose to size and pattern uniformity without sacrificing resolution. Conclusions:We have developed a 3D resist model that can simulate large numbers of contacts. Early results from the 3D model show improved patterning performance can be achieved by increasing the z-blur.

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Section: Larger Isotropic Blurmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Long

Neureuther

Naulleau

2021

J. Micro/Nanopattern. Mats. Metro.

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show abstract

“…10). 149,[238][239][240][241][242][243] While LELE double patterning methods are technically achievable, they require multiple passes through slow and expensive optical patterning steps and have challenges associated with layer-to-layer alignment and registration between the first and second litho-etch steps that can lead to significant edge placement error (EPE) issues. 31 To help reduce processing costs and EPE, self-aligned multi-patterning (SAMP) approaches have been developed as an alternative.…”

Section: Spacers and Hard Masks -The Disappearing Dielectricsmentioning

confidence: 99%

“…[376][377][378] We do also note that amorphous and poly-crystalline (pc) Si in many cases is utilized as a hard masking or other type of sacrificial patterning material. 242,243 In this regard, there have been a few reports of selective a-Si:H 275 and pc-Si. 379,380 For the former, periodic hydrogen etches are utilized to remove partially selective PECVD a-Si:H from non-growth regions.…”

Section: Siochmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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“…Post-litho defectivity can be quantitatively measured between different substrates using the conformal coating technique to increase contrast. Though the image contrast will vary depending on different resist and substrate combinations, it allows for initial understanding of how stochastics defects can be modulated based on different stacks [24]. The post litho DCD target for different systems was targeted to be in the same range to compare defectivity on similar trench sizes.…”

Section: Modulation Of Stochastics Defects Due To Resist Hardmask Intmentioning

confidence: 99%

Patterning Material Challenges for Improving EUV Stochastics

Silva¹,

Meli²,

Guo³

et al. 2019

J. Photopol. Sci. Technol.

Self Cite

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As the industry looks to extend single-expose extreme ultraviolet (EUV) lithography, stochastic effects become a significant concern to enable yield. Multiple previouslypublished reports have shown a strong tradeoff between resist sensitivity and observed stochastic defectivity. However, the limits of this trade-off between improving stochasticsrelated defects with a higher dose resist remains to be understood. How strongly does the resist formulation itself contribute to stochastics, or is it a purely dose-driven effect? Due to the thickness decrease in the patterning stack, the interfacial effects of the resist and hardmask films play a dominant factor in the material stochastics. This offers an opportunity to think differently about underlayer design for sub-32nm pitch patterning. The choice of hardmask can be used to modulate post-litho defectivity to mitigate the stochastics effects and enable more efficient pattern transfer. This paper will address multiple approaches to improving the materials stochastics through resist component optimization and hardmask film development. The defectivity at post-exposure and post-etch are correlated to electrical yield to validate the evaluation. The relative merits of patterning a chemically amplified organic resist directly on an inorganic hardmask or having different types of organic adhesion promoters as an intermediate layer will be also be presented.

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Inorganic hardmask development for extreme ultraviolet patterning

Cited by 5 publications

References 22 publications

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Patterning Material Challenges for Improving EUV Stochastics

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