InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging

Watanabe, Takayuki; Boubanga-Tombet, S.; Tanimoto, Youichi; Fateev, D. V.; Попов, В. В.; Coquillat, Dominique; Knap, W.; Meziani, Yahya Moubarak; Wang, Yuye; Minamide, Hiroaki; Ito, Hiromasa; Otsuji, T.

doi:10.1109/jsen.2012.2225831

Cited by 74 publications

(52 citation statements)

References 30 publications

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“…Following Ref. 9, we estimate from the voltages measured in open circuit geometry the voltage responsivities for the signals corresponding to the photocurrents j 2 and j C as R v ¼ U s /P Â S/ S t % 0.3 V/W and 0.15 V/W, respectively. Here, P the total power of the source at the detector plane, S radiation beam spot area, and S t ¼ 20 Â 20 lm 2 transistor area.…”

Section: Photocurrent Experimentsmentioning

confidence: 99%

“…While research aimed to development of THz FET detectors is focused on single gate structures, recently several groups have shown that higher sensitivities are expected for structures with periodic symmetric and asymmetric metal stripes or gates. 9,[15][16][17][18][19][20][21][22] In particular, dual-grating-gate (DGG) FET are considered as a good candidate for sensitive THz detection. The first data obtained on dual-gated-structures demonstrated a substantial enhancement of the photoelectric response and an ability to control detector parameters by variation of individual gate bias voltage.…”

Section: Introductionmentioning

confidence: 99%

“…[29][30][31][32] The observed phenomena is discussed in the framework of electronic ratchet 20,22,[24][25][26] and plasmonic ratchet effects excited in a 2D electron system with a spatially periodic dc in-plane potential. 9,22,27 …”

Section: Introductionmentioning

confidence: 99%

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Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Faltermeier

Olbrich

Probst

et al. 2015

Journal of Applied Physics

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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Appl. Phys. Lett. 104, 251114 (2014) We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a twodimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx

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Section: Photocurrent Experimentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Faltermeier

Olbrich

Probst

et al. 2015

Journal of Applied Physics

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“…Плазмонное детектирование в полупроводниковых ге-тероструктурах с 2D электронными системами связано с эффектами увлечения носителей заряда плазмона-ми и плазмонного храповика [12]. Рекордные значения чувствительности были достигнуты при использовании плазмонного детектирования ТГц излучения в транзи-сторах с высокой подвижностью электронов, имеющих двойной решеточный затвор [13].…”

Section: Introductionunclassified

Гигантский Эффект Выпрямления Терагерцового Излучения В Периодических Графеновых Плазмонных Структурах

Фатеев¹,

Машинский²,

Qin

et al. 2017

Физика И Техника Полупроводников

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Рассмотрено выпрямление терагерцового излучения за счет плазмонных нелинейностей в периодической графеновой структуре с двойным решеточным затвором и асимметричной элементарной ячейкой. Исследова-но влияние асимметрии элементарной ячейки на плазмонное выпрямление терагерцового излучения вблизи высших плазмонных резонансов для случаев электронной и дырочной проводимости на участках элементар-ной ячейки графена. Вычислена токовая чувствительность выпрямления терагерцового излучения за счет плазмонных эффектов дифференциального увлечения носителей заряда и электронно-дырочного храповика.

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“…35 Recently, authors have proposed an asymmetric DGG (A-DGG) structure and demonstrated coherent monochromatic THz emission and ultrahigh-sensitive THz detection with 2.2 kV∕W at 1 THz radiation. [36][37][38][39] This paper reviews recent advances in emission and detection of THz radiation using 2-D plasmons in semiconductor nanoheterostructures for nondestructive evaluations. The 2-D plasmon resonance is first presented as the operation principle to demonstrate its potential of broadband intense emission and sensitive detection of THz radiation.…”

Section: Introductionmentioning

confidence: 99%

Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations

et al. 2013

Self Cite

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Abstract. The recent advances in emission and detection of terahertz radiation using two-dimensional (2-D) plasmons in semiconductor nanoheterostructures for nondestructive evaluations are reviewed. The 2-D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron-mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. IntroductionIn the research of modern terahertz (THz) electronics, development of compact, tunable, and coherent sources operating at THz frequencies is one of the hottest issues.1 Two-dimensional (2-D) plasmons in submicron transistors have attracted much attention due to their nature of promoting emission and detection of electromagnetic radiation in the THz range. The channel of a transistor can act as a resonator for plasma waves, the charge-density waves of collectively excited 2-D electrons. The plasma frequency depends on the resonator dimensions and the density of 2-D electrons. It can reach the sub-THz or even THz range for gate lengths of a micron and submicron (nanometer) size. Therefore, different devices/structures of micron and submicron sizes supporting low-dimensional plasmons were intensively studied as possible candidates for solid-state far-infrared (FIR)/THz sources 2-18 and detectors. [19][20][21][22][23][24][25][26][27][28][29][30] Mechanisms of plasma wave excitation/emission can be divided (by convention) into two types: (1) incoherent and (2) coherent. The first is related to thermal excitation of broadband nonresonant plasmons by hot electrons.2-7 The second is related to the plasma wave instability mechanisms like Dyakonov-Shur (DS) Doppler-shift model 8 and/or Ryzhii-Satou-Shur (RSS) transit-time model, 17,18 where coherent plasmons can be excited either by hot electrons or by optical phonon emission under near ballistic electron motion. 31 On the other hand, hydrodynamic nonlinearities of 2-D plasmons in highelectron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation.

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InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging

Cited by 74 publications

References 30 publications

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

Гигантский Эффект Выпрямления Терагерцового Излучения В Периодических Графеновых Плазмонных Структурах

Emission and detection of terahertz radiation using two-dimensional plasmons in semiconductor nanoheterostructures for nondestructive evaluations

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