InP- and graphene-based grating-gated transistors for tunable THz and mm-wave detection

Esfahani, Nima Nader; Cleary, Justin W.; Peale, Robert E.; Buchwald, Walter R.; Fredricksen, Christopher J.; Hendrickson, Joshua R.; Lodge, Michael S.; Dawson, B.; Ishigami, Masa

doi:10.1117/12.918660

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“…This may occur if the n s and/or τ values have been over estimated. Similar discrepancies between experimental measurements and theory have precedent [6] and have been the cause of considerable speculation [11][12][13]. …”

Section: Resultsmentioning

confidence: 83%

First observation of a plasmon-mediated tunable photoresponse in a grating-gated InGaAs/InP HEMT for millimeter-wave detection

et al. 2012

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A tunable resonant photoresponse to millimeter-waves is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The gate consists of a metal grating with 9 μm period, which was designed to couple mm-radiation to plasmons in the two-dimensional electron gas (2DEG) of the HEMT. The resonant excitation of plasmons, which shifts with gate-bias, changes the channel conductance. These devices have potential as chip-scale frequency-agile mm-wave detectors, which may be scaled to THz frequencies.

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