InP-based 1.5 &amp;#x00B5;m quantum dot lasers: Static and dynamic properties

Reithmaier, Johann Peter; Ivanov, V.; Sichkovskyi, Vitalii; Gilfert, C.; Rippien, Anna; Felgen, Nina; Schnabel, Florian; Fuchs, Kerstin; Koshuharov, Kamen; Gready, David; Eisenstein, G.

doi:10.1109/ipcon.2013.6656521

Cited by 3 publications

(5 citation statements)

References 9 publications

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“…Recently, Reithmaier et al [139] modified the InAs/InGaAlAs/(100)-InP Qdots layer design by integrating a InGaAsP etch stop layer which allowed fabrication of the lateral gratings after ridgewaveguide processing. An output power of > 12 mW in CW operation, lasing at ~1.52 µm with SMSR of 45-50 dB was reported from the 2×1000 µm 2 device at room temperature.…”

Section: Single Mode Lasersmentioning

confidence: 99%

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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Single Mode Lasersmentioning

confidence: 99%

“…The optical linewidth in this case was measured to be ~149 kHz, however, due to internal heating, the lasing wavelength shifted with increasing current injection. [136,138,139] …”

Section: Single Mode Lasersmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…Therefore, lower threshold current and higher temperature insensitivity besides narrower spectral linewidth can be achieved using QDs in the gain media of semiconductor lasers compared to quantum well (QW) counterparts [5][6][7]. After successful growth of self-M. Sanaee assembled InAs/GaAs(InP) QDs in Stranski-Krastanov (SK) mode with considerable crystal quality and high areal density [8,9], intensive experimental effort has been dedicated to the exploration and realization of the proposed superior performances of QD lasers in the range of 1.3(1.55)µm wavelength [10][11][12][13][14][15]. Although low threshold current at room temperature [11,15] and high modulation bandwidth [10] have been observed in some real 1.3 µm multi-layer InAs/GaAs QD lasers, temperature stability of these laser sources has degraded from the theoretical predictions [16,17].…”

Section: Introductionmentioning

confidence: 99%

“…The relative power fluctuations of a QD laser would be profoundly influenced with random carrier transitions between QDs' discrete energy levels in addition to randomness of photon creation. Although many operational characteristics of QD lasers have been increasingly studied both experimentally [13,15] and theoretically [21][22][23] so far, less can be found about the noise properties of these novel lasers in literature because of further technical and mathematical complications.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Sanaee

Zarifkar

2015

J. Lightwave Technol.

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Theoretical analysis of relative intensity noise (RIN) characteristics of p-doped QD lasers has been presented. By considering dynamics of electrons and holes separately at GaAs barrier, wetting layer (WL), and three discrete QDs levels, twelve rate equations have been linearized in presence of Langevin noise sources. Calculations indicate that RIN level of QD laser reduces slightly through p-doping. Although providing excess holes to WL state decreases shot noise resulted from quantum confined levels and photon noise, the shot noise originated from three and two dimensional carrier densities, respectively inside the barrier and WL states, increases. It is shown that the RIN level declines in pdoped QD lasers by increasing the injection current which is in agreement with a recent experimental report. It is also demonstrated that the RIN level of QD lasers decreases by increasing the number of QD layers and shot noise plays the main role in this reduction.

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“…In the last few years the modal gain in 1.3 and 1.55 µm QD laser material could be strongly improved [1][2][3][4][5][6]. With these improvement new record values in the digital modulation speed in 1.3 µm [3] and 1.55 µm [7,8] could be obtained. Beside the direct modulation, which is mainly used in datacom or local area networks, a different type of light source is needed for ultra-high capacity optical networks based on coherent communication, which is used as a wavelength reference.…”

Section: Introductionmentioning

confidence: 99%

InP based 1.55 μm quantum dot materials and lasers for ultra-narrow linewidth applications

Reithmaier¹,

Sichkovskyi²,

Ivanov³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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InP-based 1.5 µm quantum dot lasers: Static and dynamic properties

Cited by 3 publications

References 9 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Theoretical Modeling of Relative Intensity Noise in p-Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

InP based 1.55 μm quantum dot materials and lasers for ultra-narrow linewidth applications

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