Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
DOI: 10.1109/cornel.1993.303126
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InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers

M. Matloubian
1
,
L.E. Larson
2
,
April S. Brown
3
et al.
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Cited by 2 publications
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Field Effect TransistorsFETs and HEMTs

Chavarkar
1
,
Mishra
2
2000
Handbook of Thin Film Devices
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Field Effect TransistorsFETs and HEMTs

Chavarkar
1
,
Mishra
2
2000
Handbook of Thin Film Devices
0
0
0
0
View full textAdd to dashboardCite

A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator

Kwon
1
,
Pavlidis
2
,
Marsh
3
et al. 1994
IEEE Microw. Guid. Wave Lett.
7
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