InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer
Yan Liang,
Wenguang Zhou,
Xiangyu Zhang
et al.
Abstract:High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm and ∼2.6 μm, respectively. At a bias voltage of −100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 μm, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific det… Show more
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