InP-based InAs/InGaAs quantum wells with type-I emission beyond 3 μm

Abstract

This work reports on InAs/In0.53Ga0.47As strain compensated quantum well structures on InP-based metamorphic buffer to generate the type-I emission of beyond 3 μm. The metamorphic buffer is composed of InxAl1−xAs graded layer and In0.8Ga0.2As virtual substrate layer. Atomic force microscope, transmission electron microscope and x-ray diffraction measurements show the moderate surface and structural properties. A photoluminescence signal up to 3.05 μm has been achieved at 300 K, which is one of the longest wavelengths from the interband emission of InP-based antimony-free structure. It is promising to employ this quantum well structure on metamorphic buffer for the laser demonstration with emission around 3 μm.

InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 μm

“…9,10 Recently, metamorphic InAs QWs have been grown on InP-based InAsP and InAlAs graded buffers by several groups to achieve the photoluminescence (PL) emission near 3 lm. [11][12][13] Comparing to InP substrate, GaAs substrate is more mature and owns the reduced cost and better mechanical robustness. GaAs-based antimony-free metamorphic lasers have been developed but limited in near-infrared (NIR) wavelength range, 14,15 Recently, MIR antimonide QW lasers have been grown on GaAs substrates using 90 interfacial misfit array (IMF) technology.…”

Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch

“…In our previous work, the effect of various kinds of MBL schemes such as a thick uniform buffer, continuously graded buffer, and step-graded buffer on the structural characteristics and device performances of InP-based InGaAs PDs has been compared [18][19][20].…”

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band

“…Recently, step-graded InAs x P 1-x buffers on InP have been applied to achieve 2.8-3 µm PL at RT [39][40][41], where 16.5 nm InAs or 22 nm InAs 0.94 P 0.06 were used as the well layers. By using 15 nm InAs QWs on continuously-graded metamorphic In x Al 1-x As buffers, RT PL of QWs at 3.05 µm [42] and low temperature lasing of laser diodes at 2.7 µm have been achieved [43]. This scheme can even be explored to mid-infrared metamorphic InAs QWs on GaAs substrate, which is even more attractive than on InP substrate [44].…”