Optoelectronic Materials and Devices II 2007
DOI: 10.1117/12.754338
|View full text |Cite
|
Sign up to set email alerts
|

InP-based long wavelength VCSELs: their characteristics and applications

Abstract: InP-based vertical cavity surface emitting lasers (VCSELs) with AlGaInAs QWs and AlGaInAs/InP DBR have been demonstrated. Over 3 mW and ~1 mW powers at both 1.3 µm and 1.55 µm have been achieved at 20 °C and 85 °C, respectively. Tests for various applications have been performed with our 1.3 and 1.55 µm VCSELs. Error free transmission over 10 km under 10 Gbit/s, 85°C has been demonstrated with both 1.3 and 1.55 µm VCSELs. The effect of electrical dispersion compensation (EDC) with 1.55 µm VCSELs has been confi… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2011
2011
2020
2020

Publication Types

Select...
2
1
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
references
References 13 publications
0
0
0
Order By: Relevance